[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

Zhang, 2019 - Google Patents

Exploring the evolution of asymmetric pattern of mask hole during plasma etching process by particle simulation method

Zhang, 2019

View HTML
Document ID
9834031359050522612
Author
Zhang P
Publication year
Publication venue
Results in Physics

External Links

Snippet

Damage on the mask surface caused by charging effect during plasma etching process continues to attract much attention currently. It has been observed that the round shape of holes in a mask can also be etched into the asymmetric shape due to factors, such as non …
Continue reading at www.sciencedirect.com (HTML) (other versions)

Classifications

    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes, e.g. for surface treatment of objects such as coating, plating, etching, sterilising or bringing about chemical reactions
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes, e.g. for surface treatment of objects such as coating, plating, etching, sterilising or bringing about chemical reactions
    • H01J37/32431—Constructional details of the reactor
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a micro-scale
    • H01J2237/3175—Lithography
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/31—Processing objects on a macro-scale

Similar Documents

Publication Publication Date Title
Zhang Exploring the evolution of asymmetric pattern of mask hole during plasma etching process by particle simulation method
Huang et al. Plasma etching of high aspect ratio features in SiO2 using Ar/C4F8/O2 mixtures: A computational investigation
Vahedi et al. Verification of frequency scaling laws for capacitive radio‐frequency discharges using two‐dimensional simulations
Zhang et al. Study on the influence of electron angular distribution on mask pattern damage in plasma etching
Zhang Study on surface charging effect on mask during plasma etching process through particle simulation
Zhang et al. Charging effect in plasma etching mask of hole array
CN111800932B (en) Plasma discharge process simulation method and system
Zhang et al. Exploring the effects of placement and electron angular distribution on two adjacent mask holes during plasma etching process
JP2927226B2 (en) Shape simulation method
Kim et al. Plasma molding over surface topography: Simulation and measurement of ion fluxes, energies and angular distributions over trenches in RF high density plasmas
Shimada et al. Modeling of feature profile evolution in SiO2 as functions of radial position and bias voltage under competition among charging, deposition, and etching in two-frequency capacitively coupled plasma
CN115293013A (en) Plasma etching model simulation method based on cellular automaton
Džafić et al. Plasma sheath modelling to predict etch-induced overlay
Noda et al. Investigation of ion transportation in high-aspect-ratio holes from fluorocarbon plasma for SiO2 etching
Kosonen et al. Critical assessment of the applicability of the Child-Langmuir law to plasma ion source extraction systems
Zhang Study on the Pulse Phase Lag Effect on Two Mask Holes during Plasma Etching
Zhang et al. Interplay between charging and roughness on two adjacent mask holes during plasma etching
Tartz et al. Validated simulation of the ion extraction grid lifetime
Zhang Charging Issues on the Rectangle Mask Line During Plasma Etching with Consideration of Electron-Solid Interaction
Sukharev Multiscale modeling of plasma etch processing
Peng et al. Conductometric study of the radial track etch rate: Free shape analysis
Yasuda et al. Multiscale simulation of resist pattern shrinkage during scanning electron microscope observations
Zhao et al. Feature profile evolution during etching of SiO2 in radio-frequency or direct-current plasmas
Qi et al. Effect of pulse waveform on plasma sheath expansion in plasma-based ion implantation
Kwok A hybrid Boltzmann electrons and PIC ions model for simulating transient state of partially ionized plasma