Lecomber et al., 1985 - Google Patents
The switching mechanism in amorphous silicon junctionsLecomber et al., 1985
- Document ID
- 9714012658903917622
- Author
- Lecomber P
- Owen A
- Spear W
- Hajto J
- Snell A
- Choi W
- Rose M
- Reynolds S
- Publication year
- Publication venue
- Journal of Non-Crystalline Solids
External Links
Snippet
Extensive new results have been obtained on memory switching in a-Si p+ ni junctions. It is shown that the ON-state has its origins in a highly conducting filament less than lμm in diameter. The physical mechanisms that could play a role in the switching operations are …
- 229910021417 amorphous silicon 0 title abstract description 41
Classifications
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
Similar Documents
Publication | Publication Date | Title |
---|---|---|
Lecomber et al. | The switching mechanism in amorphous silicon junctions | |
Owen et al. | Switching in amorphous devices | |
Dearnaley et al. | Electrical phenomena in amorphous oxide films | |
Nakayama et al. | Submicron nonvolatile memory cell based on reversible phase transition in chalcogenide glasses | |
Brockman et al. | Subnanosecond incubation times for electric-field-induced metallization of a correlated electron oxide | |
Kozicki et al. | Nonvolatile memory based on solid electrolytes | |
Abdel-All et al. | DC electric-field effect in bulk and thin-film Ge5As38Te57 chalcogenide glass | |
EP0072221B1 (en) | Non-volatile electrically programmable memory device | |
Nakayama et al. | Nonvolatile memory based on phase change in Se–Sb–Te glass | |
JPS60198861A (en) | Thin film transistor | |
Prakash et al. | Electrical switching behaviour of semiconducting aluminium telluride glasses | |
Jonscher | Electronic conduction in dielectric films | |
US3748501A (en) | Multi-terminal amorphous electronic control device | |
Van Roosbroeck | Principles of electrical behavior of amorphous semiconductor alloys | |
Hauser et al. | Localized gap states in amorphous semiconducting compounds | |
Thornburg | Physical properties of the As 2 (Se, Te) 3 glasses | |
Jones et al. | Threshold and memory switching in amorphous selenium thin films | |
Yin et al. | Memory effect in metal–chalcogenide–metal structures for ultrahigh-density nonvolatile memories | |
Sugi et al. | Switching characteristics of chalcogenide glass | |
Thomas | The temperature dependence of the non-ohmic current and switching characteristics of a chalcogenide glass | |
Pfister et al. | Defects in chalcogenide glasses I. The influence of thermally induced defects on transport in a-As2Se3 | |
Takahashi et al. | Switching in cadmium boracite single crystals | |
Charles Jr et al. | Switching times in amorphous boron, boron plus carbon, and silicon thin films | |
Madhu et al. | High field electrical switching behavior of Ge10Se90− xTlx glasses | |
Abdullayev et al. | Memory switching effects in locally grown polycrystalline silicon films |