Lecomber et al., 1985 - Google Patents
The switching mechanism in amorphous silicon junctionsLecomber et al., 1985
- Document ID
- 9714012658903917622
- Author
- Lecomber P
- Owen A
- Spear W
- Hajto J
- Snell A
- Choi W
- Rose M
- Reynolds S
- Publication year
- Publication venue
- Journal of Non-Crystalline Solids
External Links
Snippet
Extensive new results have been obtained on memory switching in a-Si p+ ni junctions. It is shown that the ON-state has its origins in a highly conducting filament less than lμm in diameter. The physical mechanisms that could play a role in the switching operations are …
- 229910021417 amorphous silicon 0 title abstract description 41
Classifications
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
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