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Gherasoiu et al., 2015 - Google Patents

InGaN pn-junctions grown by PA-MBE: Material characterization and fabrication of nanocolumn electroluminescent devices

Gherasoiu et al., 2015

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Document ID
9649029896716635076
Author
Gherasoiu I
Yu K
Reichertz L
Walukiewicz W
Publication year
Publication venue
Journal of Crystal Growth

External Links

Snippet

PN junctions are basic building blocks of many electronic devices and their performance depends on the structural properties of the component layers and on the type and the amount of the doping impurities incorporated. Magnesium is the common p-type dopant for …
Continue reading at www.sunypoly-rsc.org (PDF) (other versions)

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    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
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    • H01L29/66—Types of semiconductor device; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
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