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Park et al., 2002 - Google Patents

Dependence of electrical and optical properties of amorphous SiC: H thin films grown by rf plasma enhanced chemical vapor deposition on annealing temperature

Park et al., 2002

Document ID
9611752154241483075
Author
Park M
Choi W
Hong B
Kim Y
Yoon D
Publication year
Publication venue
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

External Links

Snippet

In this article, we investigated the dependence of optical and electrical properties of hydrogenated amorphous silicon carbide (a-SiC: H) films on annealing temperature (T a) and radio frequency (rf) power. The substrate temperature (T s) was 250° C, the rf power …
Continue reading at pubs.aip.org (other versions)

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    • C23C16/26—Deposition of carbon only
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    • C23C16/277—Diamond only using other elements in the gas phase besides carbon and hydrogen; using other elements besides carbon, hydrogen and oxygen in case of use of combustion torches; using other elements besides carbon, hydrogen and inert gas in case of use of plasma jets
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
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