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Nakajima et al., 2005 - Google Patents

Carrier Mobility in Metal–Oxide–Semiconductor Field Effect Transistor with Atomic-Layer-Deposited Si–Nitride Gate Dielectrics

Nakajima et al., 2005

Document ID
9550197001985143408
Author
Nakajima A
Ishii H
Yokoyama S
Publication year
Publication venue
Japanese journal of applied physics

External Links

Snippet

Abstract n+-poly-Si gate metal–oxide–semiconductor transistors with atomic-layer-deposited (ALD) Si–nitride gate dielectrics were fabricated. Clear saturation characteristics of the drain current were obtained for samples with the Si–nitride gate dielectrics, similar to reference …
Continue reading at iopscience.iop.org (other versions)

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