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Shapiro et al., 2009 - Google Patents

Reliable through silicon vias for 3D silicon applications

Shapiro et al., 2009

Document ID
9469966489300320016
Author
Shapiro M
Interrante M
Andry P
Dang B
Tsang C
Liptak R
Griffith J
Sprogis E
Guerin L
Truong V
Berger D
Knickerbocker J
Publication year
Publication venue
2009 IEEE International Interconnect Technology Conference

External Links

Snippet

The use of through silicon vias (TSVs) is required to implement 3D chip stacking technology. This work explores a method to fabricate highly reliable TSVs that is compatible with CMOS processing. The key feature of the TSVs is a redundant tungsten bar with a high temperature …
Continue reading at ieeexplore.ieee.org (other versions)

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