[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

Bagnall et al., 2017 - Google Patents

Theory of thermal time constants in GaN high-electron-mobility transistors

Bagnall et al., 2017

View PDF
Document ID
935166443598216023
Author
Bagnall K
Wang E
Publication year
Publication venue
IEEE Transactions on Components, Packaging and Manufacturing Technology

External Links

Snippet

Due to the high dissipated power densities present in GaN high-electron-mobility transistors (HEMTs) in high-power radio frequency applications, thermal analysis and thermal management of these devices are important in achieving their full potential. In this paper, we …
Continue reading at ieeexplore.ieee.org (PDF) (other versions)

Classifications

    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367—Cooling facilitated by shape of device
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation; Temperature sensing arrangements
    • H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING; COUNTING
    • G06F—ELECTRICAL DIGITAL DATA PROCESSING
    • G06F17/00—Digital computing or data processing equipment or methods, specially adapted for specific functions
    • G06F17/50—Computer-aided design
    • G06F17/5009—Computer-aided design using simulation
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device; Multistep manufacturing processes therefor

Similar Documents

Publication Publication Date Title
Bagnall et al. Theory of thermal time constants in GaN high-electron-mobility transistors
Muzychka et al. Thermal spreading resistance and heat source temperature in compound orthotropic systems with interfacial resistance
Bagnall et al. Analytical solution for temperature rise in complex multilayer structures with discrete heat sources
Altman et al. Analysis and characterization of thermal transport in GaN HEMTs on Diamond substrates
Kuball et al. Time-resolved temperature measurement of AlGaN/GaN electronic devices using micro-Raman spectroscopy
Darwish et al. Accurate determination of thermal resistance of FETs
Sadi et al. Investigation of self-heating effects in submicrometer GaN/AlGaN HEMTs using an electrothermal Monte Carlo method
Bagnall Device-level thermal analysis of GaN-based electronics
Benbakhti et al. Effects of self-heating on performance degradation in AlGaN/GaN-based devices
Jones et al. Transient stress characterization of AlGaN/GaN HEMTs due to electrical and thermal effects
Park et al. Thermal modeling and measurement of GaN-based HFET devices
Sodan et al. Fast and distributed thermal model for thermal modeling of GaN power devices
Wu et al. Accurate measurement of channel temperature for AlGaN/GaN HEMTs
Maize et al. Thermoreflectance CCD imaging of self-heating in power MOSFET arrays
Pearson et al. Guidelines for reduced-order thermal modeling of multifinger GaN HEMTs
Schwitter et al. Impact of bias and device structure on gate junction temperature in AlGaN/GaN-on-Si HEMTs
Sahoo et al. Thermal analysis of AlN/GaN/AlGaN HEMTs grown on Si and SiC substrate through TCAD simulations and measurements
Russo et al. Analysis of the thermal behavior of AlGaN/GaN HEMTs
Bagnall et al. Transient thermal dynamics of GaN HEMTs
El-Helou et al. Full thermal characterization of AlGaN/GaN high electron mobility transistors on silicon, silicon carbide, and diamond substrates using a reverse modeling approach
Bagnall et al. Analytical thermal model for HEMTs with complex epitaxial structures
Wilson et al. Kapitza resistance at the two-dimensional electron gas interface
Zhang et al. Determining drain current characteristics and channel temperature rise in GaN HEMTs
Darwish et al. Utilizing diode characteristics for GaN HEMT channel temperature prediction
Dundar et al. Thermal characterization of field plated AlGaN/GaN HEMTs