[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

Sharma et al., 2012 - Google Patents

Anisotropy of spin polarization and spin accumulation in Si/Al 2 O 3/ferromagnet tunnel devices

Sharma et al., 2012

View PDF
Document ID
9350426376533154835
Author
Sharma S
Dash S
Saito H
Yuasa S
Van Wees B
Jansen R
Publication year
Publication venue
Physical Review B—Condensed Matter and Materials Physics

External Links

Snippet

The contribution of the spin accumulation to tunneling anisotropy in Si/Al 2 O 3/ferromagnet devices was investigated. Rotation of the magnetization of the ferromagnet from in-plane to perpendicular to the tunnel interface reveals a tunneling anisotropy that depends on the type …
Continue reading at research.rug.nl (PDF) (other versions)

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices, e.g. Hall effect devices; using magneto-resistive devices
    • G01R33/09—Magnetoresistive devices
    • G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices, e.g. Hall effect devices; using magneto-resistive devices
    • G01R33/07—Hall effect devices
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L43/00—Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof
    • H01L43/06—Hall-effect devices
    • H01L43/065—Semiconductor Hall-effect devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/028—Electrodynamic magnetometers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/12—Measuring magnetic properties of articles or specimens of solids or fluids
    • G01R33/1284—Spin resolved measurements; Influencing spins during measurements, e.g. in spintronics devices
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L43/00—Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof
    • H01L43/02—Details
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L43/00—Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof
    • H01L43/08—Magnetic-field-controlled resistors
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L43/00—Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof
    • H01L43/12—Processes or apparatus peculiar to the manufacture or treatment of these devices or of parts thereof
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/20—Arrangements or instruments for measuring magnetic variables involving magnetic resonance
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/0023—Electronic aspects, e.g. circuits for stimulation, evaluation, control; Treating the measured signals; calibration
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies; Multistep manufacturing processes therefor characterised by the materials of which they are formed

Similar Documents

Publication Publication Date Title
Dash et al. Spin precession and inverted Hanle effect in a semiconductor near a finite-roughness ferromagnetic interface
Kikkawa et al. Longitudinal spin Seebeck effect free from the proximity Nernst effect
Saito et al. Spin injection, transport, and detection at room temperature in a lateral spin transport device with Co2FeAl0. 5Si0. 5/n-GaAs schottky tunnel junctions
Sharma et al. Anisotropy of spin polarization and spin accumulation in Si/Al 2 O 3/ferromagnet tunnel devices
Weiler et al. Local charge and spin currents in magnetothermal landscapes
Grünewald et al. Tunneling anisotropic magnetoresistance in organic spin valves
Rüster et al. Very Large Tunneling Anisotropic Magnetoresistance<? format?> of a (G a, M n) A s/G a A s/(G a, M n) A s Stack
Valenzuela et al. Spin polarized tunneling at finite bias
US9172030B2 (en) Magneto-electronic devices and methods of production
Giddings et al. Large tunneling anisotropic magnetoresistance in (Ga, Mn) As nanoconstrictions
Elsen et al. Spin transfer experiments on (Ga, Mn) As∕(In, Ga) As∕(Ga, Mn) As tunnel junctions
Uemura et al. Non-local detection of spin-polarized electrons at room temperature in Co50Fe50/GaAs Schottky tunnel junctions
Akiho et al. Electrical injection of spin-polarized electrons and electrical detection of dynamic nuclear polarization using a Heusler alloy spin source
Ishibashi et al. Large diode sensitivity of CoFeB/MgO/CoFeB magnetic tunnel junctions
Suzuki et al. Spin-torque diode effect and its application
Hanbicki et al. Electrical injection and detection of spin accumulation in Ge at room temperature
Herranz et al. Co-Doped (La, Sr) TiO 3-δ: A High Curie Temperature Diluted Magnetic System<? format?> with Large Spin Polarization
Shiogai et al. Dynamic nuclear spin polarization in an all-semiconductor spin injection device with (Ga, Mn) As/n-GaAs spin Esaki diode
Ishikawa et al. Maximum magnitude in bias-dependent spin accumulation signals of CoFe/MgO/Si on insulator devices
Mihály et al. Anomalous hall effect in the (In, Mn) Sb dilute magnetic semiconductor
Han et al. Control of offset field and pinning stability in perpendicular magnetic tunnelling junctions with synthetic antiferromagnetic coupling multilayer
Rortais et al. Electrical spin injection in silicon and the role of defects
Sato et al. Origin of the broad three-terminal Hanle signals in Fe/SiO2/Si tunnel junctions
Wimmer et al. Orbital effects on tunneling anisotropic magnetoresistance in Fe/GaAs/Au junctions
Akiho et al. Effect of mgo barrier insertion on spin-dependent transport properties of cofe/n-gaas heterojunctions