[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

Roy et al., 2018 - Google Patents

Fully integrated CMOS power amplifier using resistive current combining technique

Roy et al., 2018

View PDF @Full View
Document ID
9350308159913080617
Author
Roy P
Dawn D
Publication year
Publication venue
IET Microwaves, Antennas & Propagation

External Links

Snippet

This study presents a fully integrated complementary metal oxide semiconductor (CMOS) power amplifier (PA) covering LTE‐advanced bands from 825 to 915 MHz for cellular application and the bands of 978 MHz universal access transceiver mode and 1090 MHz …
Continue reading at ietresearch.onlinelibrary.wiley.com (PDF) (other versions)

Classifications

    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/24Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
    • H03F3/245Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages with semiconductor devices only
    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189High frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/195High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits
    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/217Class D power amplifiers; Switching amplifiers
    • H03F3/2176Class E amplifiers
    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/211Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/60Amplifiers in which coupling networks have distributed constants, e.g. with waveguide resonators
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04BTRANSMISSION
    • H04B1/00Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/02Transmitters
    • H04B1/04Circuits
    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F1/00Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/56Modifications of input or output impedances, not otherwise provided for
    • H03F1/565Modifications of input or output impedances, not otherwise provided for using inductive elements
    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F1/00Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F2200/00Indexing scheme relating to amplifiers
    • H03F2200/387A circuit being added at the output of an amplifier to adapt the output impedance of the amplifier

Similar Documents

Publication Publication Date Title
Zhang et al. A millimeter-wave three-way Doherty power amplifier for 5G NR OFDM
Curtis et al. Ka‐band doherty power amplifier with 26.9 dBm output power, 42% peak PAE and 32% back‐off PAE using GaAs PHEMTS
Narendra et al. Optimised high‐efficiency Class E radio frequency power amplifier for wide bandwidth and high harmonics suppression
Vigilante et al. 5G and E-band communication circuits in deep-scaled CMOS
Kang et al. Highly efficient wideband X‐band MMIC class‐F power amplifier with cascode FP GaN HEMT
Tufféry et al. CMOS fully integrated reconfigurable power amplifier with efficiency enhancement for LTE applications
Cheng et al. High‐efficiency Doherty power amplifier with wide OPBO range for base station systems
Kalyan et al. Design strategy of concurrent multi‐band Doherty power amplifier
Lee et al. X‐band two‐stage Doherty power amplifier based on pre‐matched GaN‐HEMTs
Roy et al. Fully integrated CMOS power amplifier using resistive current combining technique
Hamid et al. A State-of-the-Art Review on CMOS Radio Frequency Power Amplifiers for Wireless Communication Systems
Lee et al. 3.88 dB NF 60 GHz CMOS UWB LNA with small group‐delay‐variation
Nguyen et al. A 4–20 GHz, multi‐watt level, fully integrated push–pull distributed power amplifier with wideband even‐order harmonic suppression
Koo et al. GaN‐HEMT asymmetric three‐way Doherty power amplifier using GPD
Park et al. Wideband harmonic‐tuned CMOS power amplifier with 19.5 dBm output power and 22.6% PAE over entire X‐band
Jia et al. Simple and robust self‐healing technique for millimetre‐wave amplifiers
Xie et al. A 5.5/12.5‐GHz concurrent dual‐band power amplifier MMIC in 0.25 μm GaAs technology
Li et al. Complementary metal–oxide–semiconductor 60 GHz power amplifier by in‐phase power combining and digitally assisted power back‐off efficiency enhancement
Sim et al. A CMOS power amplifier using a split cascode structure to enhance its efficiency
Lee et al. 2.4 GHz CMOS Power Amplifier with Mode‐Locking Structure to Enhance Gain
Palomba et al. Microwave signal conditioning through non‐reciprocal phase shifting
Kong et al. A Doherty Power Amplifier with Large Back‐Off Power Range Using Integrated Enhancing Reactance
Vijay et al. Design of penta‐band antenna with integrated LNA circuit for vehicular communications
Kim et al. Three octave ultra‐wideband 3‐port circulator in 0.11 µm CMOS
KuppiReddy et al. PVT compensated high selectivity low‐power balun LNA for MedRadio communication