[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

Pollak et al., 1995 - Google Patents

Nondestructive, room temperature analysis/qualification of wafer-sized semiconductor device structures using contactless electromodulation spectroscopy

Pollak et al., 1995

Document ID
9322115319115795228
Author
Pollak F
Qiang H
Yan D
Krystek W
Moneger S
Publication year
Publication venue
Solid-state electronics

External Links

Snippet

This paper reviews the use of the contactless, and hence nondestructive, electromodulation methods of photoreflectance and contactless electroreflectance for the room temperature characterization and qualification of semiconductor device structures. These include …
Continue reading at www.sciencedirect.com (other versions)

Classifications

    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/88—Tunnel-effect diodes
    • H01L29/882—Resonant tunneling diodes, i.e. RTD, RTBD
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01S—DEVICES USING STIMULATED EMISSION
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well, or supperlattice structures, e.g. single quantum well lasers (SQW lasers), multiple quantum well lasers (MQW lasers), graded index separate confinement hetrostructure lasers (GRINSCH lasers)
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01S—DEVICES USING STIMULATED EMISSION
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L31/00—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof

Similar Documents

Publication Publication Date Title
Yachmenev et al. Arsenides-and related III-V materials-based multilayered structures for terahertz applications: Various designs and growth technology
US11043517B2 (en) Semiconductor crystal substrate, infrared detector, method for producing semiconductor crystal substrate, and method for producing infrared detector
Huang et al. Non‐destructive, room temperature characterization of wafer‐sized III–V semiconductor device structures using contactless electromodulation and wavelength‐modulated surface photovoltage spectroscopy
Fuchs et al. Optoelectronic properties of photodiodes for the mid-and far-infrared based on the InAs/GaSb/AlSb materials family
Pollak et al. Nondestructive, room temperature analysis/qualification of wafer-sized semiconductor device structures using contactless electromodulation spectroscopy
Pollak et al. Contactless electromodulation for the nondestructive, room-temperature analysis of wafer-sized semiconductor device structures
Encomendero et al. Resonant tunneling transport in polar III-Nitride heterostructures
Jacobs Development of resonant tunnelling diode terahertz emitter
Pollak et al. Analyzing semiconductor devices using modulation spectroscopy
Lu et al. Photoluminescence analysis of C-doped npn AlGaAs/GaAs heterojunction bipolar transistors
Fang et al. Electrical characterization of self-assembled In 0.5 Ga 0.5 As/GaAs quantum dots by deep level transient spectroscopy
Pollak et al. Characterization of semiconductor device structures using contactless electromodulation
Xia et al. Discrete steps in the capacitance-voltage characteristics of GaInN/GaN light emitting diode structures
Aslan et al. Observation of resonant tunneling through a self-assembled InAs quantum dot layer
Qiang et al. Modulation Spectroscopy Characterization of Semiconductor Heterostructures
Qiang et al. Characterization of semiconductor device structures by modulation spectroscopy
Pollak et al. CONTACTLESS ELECTROMODULATION FOR THE CHARACTERIZATION OF SEMICONDUCTOR DEVICE STRUCTURES
Christou et al. The effect of defects and interfacial stress on InGaAs/GaAs heterojunction FET reliability
Chen et al. Photoreflectance characterization on the InAlAs-InGaAs heterojunction bipolar transistors
Hamoudi et al. Photoconductivity study of crescent-shaped GaAs/GaAlAs quantum wires grown by flow rate modulation epitaxy
Buckle et al. Full wafer optical characterisation of resonant tunnelling structures using photoluminescence excitation spectroscopy
Seo et al. Thin film GaN metal-semiconductor-metal photodetectors integrated onto silicon
Cunningham et al. Monolithic integration of low-temperature-grown GaAs with a two-dimensional electron gas
Priante Study of ultraviolet AlGaN nanowires light-emitting diodes
Majerfeld et al. N-and P-TYPE GaAs/AlGaAs SUPERLATTICE INFRARED DETECTOR STRUCTURES: INTERPLAY of DESIGN, MATERIALS and CHARACTERIZATION ISSUES