Jafry et al., 2020 - Google Patents
MAX phase based saturable absorber for mode-locked erbium-doped fiber laserJafry et al., 2020
- Document ID
- 9310024835453274646
- Author
- Jafry A
- Kasim N
- Rusdi M
- Rosol A
- Yusoff R
- Muhammad A
- Nizamani B
- Harun S
- Publication year
- Publication venue
- Optics & laser technology
External Links
Snippet
We presented an ultrashort pulse generation in an erbium-doped fiber laser cavity using MAX-PVA as a mode-locker. A thin film of SA was prepared by mixing PVA with Ti 3 AlC 2 as a saturable absorber inside the laser cavity. The optical nonlinearity was also demonstrated …
- 239000000835 fiber 0 title abstract description 44
Classifications
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01S—DEVICES USING STIMULATED EMISSION
- H01S3/00—Lasers, i.e. devices for generation, amplification, modulation, demodulation, or frequency-changing, using stimulated emission, of infra-red, visible, or ultra-violet waves
- H01S3/05—Construction or shape of optical resonators; Accomodation of active medium therein; Shape of active medium
- H01S3/06—Construction or shape of active medium
- H01S3/063—Waveguide lasers, i.e. whereby the dimensions of the waveguide are of the order of the light wavelength
- H01S3/067—Fibre lasers
- H01S3/06708—Constructional details of the fibre, e.g. compositions, cross-section, shape or tapering
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01S—DEVICES USING STIMULATED EMISSION
- H01S3/00—Lasers, i.e. devices for generation, amplification, modulation, demodulation, or frequency-changing, using stimulated emission, of infra-red, visible, or ultra-violet waves
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/11—Pulse generation, e.g. Q-switching, mode locking
- H01S3/1106—Mode locking
- H01S3/1112—Passive mode locking
- H01S3/1115—Passive mode locking using a saturable absorber
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01S—DEVICES USING STIMULATED EMISSION
- H01S3/00—Lasers, i.e. devices for generation, amplification, modulation, demodulation, or frequency-changing, using stimulated emission, of infra-red, visible, or ultra-violet waves
- H01S3/14—Lasers, i.e. devices for generation, amplification, modulation, demodulation, or frequency-changing, using stimulated emission, of infra-red, visible, or ultra-violet waves characterised by the material used as the active medium
- H01S3/16—Solid materials
- H01S3/1601—Solid materials characterised by an active (lasing) ion
- H01S3/1603—Solid materials characterised by an active (lasing) ion rare earth
- H01S3/1618—Solid materials characterised by an active (lasing) ion rare earth ytterbium
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01S—DEVICES USING STIMULATED EMISSION
- H01S3/00—Lasers, i.e. devices for generation, amplification, modulation, demodulation, or frequency-changing, using stimulated emission, of infra-red, visible, or ultra-violet waves
- H01S3/05—Construction or shape of optical resonators; Accomodation of active medium therein; Shape of active medium
- H01S3/06—Construction or shape of active medium
- H01S3/0619—Coatings, e.g. AR, HR, passivation layer
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01S—DEVICES USING STIMULATED EMISSION
- H01S3/00—Lasers, i.e. devices for generation, amplification, modulation, demodulation, or frequency-changing, using stimulated emission, of infra-red, visible, or ultra-violet waves
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/106—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling a device placed within the cavity
- H01S3/1063—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling a device placed within the cavity using a solid state device provided with at least one potential jump barrier
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01S—DEVICES USING STIMULATED EMISSION
- H01S3/00—Lasers, i.e. devices for generation, amplification, modulation, demodulation, or frequency-changing, using stimulated emission, of infra-red, visible, or ultra-violet waves
- H01S3/005—Optical devices external to the laser cavity, specially adapted for lasers, e.g. for homogenisation of the beam or for manipulating laser pulses, e.g. pulse shaping
- H01S3/0092—Nonlinear frequency conversion, e.g. second harmonic generation [SHG] or sum- or difference-frequency generation outside the laser cavity
Similar Documents
Publication | Publication Date | Title |
---|---|---|
Jafry et al. | MAX phase based saturable absorber for mode-locked erbium-doped fiber laser | |
Haris et al. | Passively Q-switched Erbium-doped and Ytterbium-doped fibre lasers with topological insulator bismuth selenide (Bi2Se3) as saturable absorber | |
Khaleel et al. | Magnesium oxide (MgO) thin film as saturable absorber for passively mode locked erbium-doped fiber laser | |
Pawliszewska et al. | Fundamental and harmonic mode-locking at 2.1 μm with black phosphorus saturable absorber | |
Sotor et al. | Mode-locked erbium-doped fiber laser based on evanescent field interaction with Sb2Te3 topological insulator | |
Haris et al. | Passively Q-switched and mode-locked Erbium-doped fiber laser with topological insulator Bismuth Selenide (Bi2Se3) as saturable absorber at C-band region | |
Yu et al. | Thulium/holmium-doped fiber laser passively mode locked by black phosphorus nanoplatelets-based saturable absorber | |
Lee et al. | Passively Q-switched 1.89-μm fiber laser using a bulk-structured Bi 2 Te 3 topological insulator | |
Jung et al. | A mode-locked 1.91 µm fiber laser based on interaction between graphene oxide and evanescent field | |
Cui et al. | MoS2-clad microfibre laser delivering conventional, dispersion-managed and dissipative solitons | |
Al-Hiti et al. | Holmium oxide thin film as a saturable absorber for generating Q-switched and mode-locked erbium-doped fiber lasers | |
Cao et al. | Tm-doped fiber laser mode-locking with MoS2-polyvinyl alcohol saturable absorber | |
Ahmed et al. | Femtosecond mode-locked erbium-doped fiber laser based on MoS2–PVA saturable absorber | |
Zulkipli et al. | Generation of Q-switched and mode-locked pulses with Eu2O3 saturable absorber | |
Luo et al. | Pulsed erbium-doped fiber laser by a few-layer molybdenum disulfide saturable absorber: from Q-switching to mode-locking | |
Chen et al. | Fiber-integrated tungsten disulfide saturable absorber (mirror) for pulsed fiber lasers | |
Liu et al. | Generation of dark solitons in erbium-doped fiber laser based on black phosphorus nanoparticles | |
Al-Masoodi et al. | Mode-locked ytterbium-doped fiber laser using mechanically exfoliated black phosphorus as saturable absorber | |
Jiang et al. | Bismuth Telluride nanocrystal: broadband nonlinear response and its application in ultrafast photonics | |
Ahmad et al. | Evanescent field interaction of tapered fiber with graphene oxide in generation of wide-bandwidth mode-locked pulses | |
Yusoff et al. | Q-switched and mode-locked erbium-doped fiber laser using gadolinium oxide as saturable absorber | |
Long et al. | In2Se3 nanosheets with broadband saturable absorption used for near-infrared femtosecond laser mode locking | |
Jafry et al. | Ultrashort pulse generation with MXene Ti3C2Tx embedded in PVA and deposited onto D-shaped fiber | |
Ahmad et al. | Thulium holmium-doped fiber laser mode-locked using Sb2Te3 saturable absorber coated arc-shaped fiber | |
Wang et al. | Mode locking and multiwavelength Q-switching in a dumbbell-shaped fiber laser with a gold nanorod saturable absorber |