Atkins et al., 2011 - Google Patents
Low threshold room temperature GaAs/AlGaAs quantum cascade laser with InAlP waveguideAtkins et al., 2011
View PDF- Document ID
- 9210453493982493411
- Author
- Atkins C
- Krysa A
- Revin D
- Kennedy K
- Commin J
- Cockburn J
- Publication year
- Publication venue
- Electronics letters
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Snippet
A λ≃ 9.7 µm GaAs/Al0. 45Ga0. 55As quantum cascade laser with an In0. 47Al0. 53P waveguide is reported that demonstrates record low threshold current densities for the GaAs/AlxGa1-xAs materials system in the mid-infrared. Under pulsed operation, threshold …
- 229910001218 Gallium arsenide 0 title abstract description 29
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- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well, or supperlattice structures, e.g. single quantum well lasers (SQW lasers), multiple quantum well lasers (MQW lasers), graded index separate confinement hetrostructure lasers (GRINSCH lasers) in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
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