Zhou et al., 2020 - Google Patents
Synthesis of co‐doped MoS2 monolayers with enhanced valley splittingZhou et al., 2020
View PDF- Document ID
- 9182712485376432671
- Author
- Zhou J
- Lin J
- Sims H
- Jiang C
- Cong C
- Brehm J
- Zhang Z
- Niu L
- Chen Y
- Zhou Y
- Wang Y
- Liu F
- Zhu C
- Yu T
- Suenaga K
- Mishra R
- Pantelides S
- Zhu Z
- Gao W
- Liu Z
- Zhou W
- Publication year
- Publication venue
- Advanced Materials
External Links
Snippet
Internal magnetic moments induced by magnetic dopants in MoS2 monolayers are shown to serve as a new means to engineer valley Zeeman splitting (VZS). Specifically, successful synthesis of monolayer MoS2 doped with the magnetic element Co is reported, and the …
- 101700011027 GPKOW 0 title abstract description 100
Classifications
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- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
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- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L43/00—Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof
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