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Ahn et al., 1992 - Google Patents

Suppression of stress‐induced leakage current in ultrathin N2O oxides

Ahn et al., 1992

Document ID
9179525745870252373
Author
Ahn J
Kim J
Lo G
Kwong D
Publication year
Publication venue
Applied physics letters

External Links

Snippet

In this letter, the stress-induced leakage current (SILC) is studied in NzO gate oxide. Compared to control thermal oxide grown in 02, N, O oxide shows suppressed SILC, and the suppression is more pronounced under substrate electron injection. Moreover, the …
Continue reading at pubs.aip.org (other versions)

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