Chang et al., 2009 - Google Patents
Improvement of resistive switching characteristics in TiO2 thin films with embedded Pt nanocrystalsChang et al., 2009
- Document ID
- 9177794660046785931
- Author
- Chang W
- Cheng K
- Tsai J
- Chen H
- Chen F
- Tsai M
- Wu T
- Publication year
- Publication venue
- Applied Physics Letters
External Links
Snippet
We have fabricated TiO 2 thin films with embedded Pt nanocrystals (Pt-NCs) and investigated the resistive switching characteristics for nonvolatile memory application. Reversible and steady bistable resistance switching behavior was observed for the Pt/TiO …
- 239000010409 thin film 0 title abstract description 20
Classifications
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- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L45/00—Solid state devices adapted for rectifying, amplifying, oscillating or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof
- H01L45/04—Bistable or multistable switching devices, e.g. for resistance switching non-volatile memory
- H01L45/14—Selection of switching materials
- H01L45/145—Oxides or nitrides
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L45/00—Solid state devices adapted for rectifying, amplifying, oscillating or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof
- H01L45/04—Bistable or multistable switching devices, e.g. for resistance switching non-volatile memory
- H01L45/12—Details
- H01L45/122—Device geometry
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L45/00—Solid state devices adapted for rectifying, amplifying, oscillating or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof
- H01L45/04—Bistable or multistable switching devices, e.g. for resistance switching non-volatile memory
- H01L45/16—Manufacturing
- H01L45/1608—Formation of the switching material, e.g. layer deposition
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