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Ronning et al., 1999 - Google Patents

Photoluminescence characterization of Mg implanted GaN

Ronning et al., 1999

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Document ID
9116616529814510770
Author
Ronning C
Hofsäss H
Stoetzler A
Deicher M
Carlson E
Hartlieb P
Gehrke T
Rajagopal P
Davis R
Publication year
Publication venue
MRS Online Proceedings Library (OPL)

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Single crystalline (0001) gallium nitride layers, capped with a thin epitaxial aluminum nitride layer, were implanted with magnesium and subsequently annealed in vacuum to 1150-1300 oC for 10-60 minutes. Photoluminescence (PL) measurements showed the typical donor …
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