Fujimoto et al., 2013 - Google Patents
Plasma-tolerant structure for organic light-emitting diodes with aluminum cathodes fabricated by DC magnetron sputtering: Using a Li-doped electron transport layerFujimoto et al., 2013
- Document ID
- 90980226565623472
- Author
- Fujimoto H
- Miyayama T
- Sanada N
- Adachi C
- Publication year
- Publication venue
- Organic Electronics
External Links
Snippet
We fabricate aluminum cathodes that are almost free from plasma damage by DC magnetron sputtering for organic light-emitting diodes (OLEDs). While sputtering is widely known to have numerous advantages over conventional evaporation for mass production of …
- 229910052782 aluminium 0 title abstract description 7
Classifications
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L51/00—Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
- H01L51/50—Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for light emission, e.g. organic light emitting diodes [OLED] or polymer light emitting devices [PLED];
- H01L51/52—Details of devices
- H01L51/5203—Electrodes
- H01L51/5206—Anodes, i.e. with high work-function material
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L51/00—Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
- H01L51/50—Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for light emission, e.g. organic light emitting diodes [OLED] or polymer light emitting devices [PLED];
- H01L51/5088—Carrier injection layer
- H01L51/5092—Electron injection layer
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L51/00—Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
- H01L51/50—Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for light emission, e.g. organic light emitting diodes [OLED] or polymer light emitting devices [PLED];
- H01L51/52—Details of devices
- H01L51/5237—Passivation; Containers; Encapsulation, e.g. against humidity
- H01L51/5253—Protective coatings
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L51/00—Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
- H01L51/50—Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for light emission, e.g. organic light emitting diodes [OLED] or polymer light emitting devices [PLED];
- H01L51/52—Details of devices
- H01L51/5237—Passivation; Containers; Encapsulation, e.g. against humidity
- H01L51/524—Sealing arrangements having a self-supporting structure, e.g. containers
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L51/00—Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
- H01L51/0032—Selection of organic semiconducting materials, e.g. organic light sensitive or organic light emitting materials
- H01L51/0077—Coordination compounds, e.g. porphyrin
- H01L51/0079—Metal complexes comprising a IIIB-metal (B, Al, Ga, In or TI), e.g. Tris (8-hydroxyquinoline) gallium (Gaq3)
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L51/00—Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
- H01L51/50—Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for light emission, e.g. organic light emitting diodes [OLED] or polymer light emitting devices [PLED];
- H01L51/56—Processes or apparatus specially adapted for the manufacture or treatment of such devices or of parts thereof
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L51/00—Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
- H01L51/0032—Selection of organic semiconducting materials, e.g. organic light sensitive or organic light emitting materials
- H01L51/005—Macromolecular systems with low molecular weight, e.g. cyanine dyes, coumarine dyes, tetrathiafulvalene
- H01L51/0062—Macromolecular systems with low molecular weight, e.g. cyanine dyes, coumarine dyes, tetrathiafulvalene aromatic compounds comprising a hetero atom, e.g.: N,P,S
- H01L51/0071—Polycyclic condensed heteroaromatic hydrocarbons
- H01L51/0072—Polycyclic condensed heteroaromatic hydrocarbons comprising only nitrogen in the heteroaromatic polycondensed ringsystem, e.g. phenanthroline, carbazole
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L51/00—Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
- H01L51/0001—Processes specially adapted for the manufacture or treatment of devices or of parts thereof
- H01L51/0002—Deposition of organic semiconductor materials on a substrate
- H01L51/0008—Deposition of organic semiconductor materials on a substrate using physical deposition, e.g. sublimation, sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
- C23C14/325—Electric arc evaporation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L2251/00—Indexing scheme relating to organic semiconductor devices covered by group H01L51/00
- H01L2251/50—Organic light emitting devices
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L2251/00—Indexing scheme relating to organic semiconductor devices covered by group H01L51/00
- H01L2251/30—Materials
Similar Documents
Publication | Publication Date | Title |
---|---|---|
Fujimoto et al. | Plasma-tolerant structure for organic light-emitting diodes with aluminum cathodes fabricated by DC magnetron sputtering: Using a Li-doped electron transport layer | |
Angel et al. | Effect of lithium and silver diffusion in single-stack and tandem OLED devices | |
Lei et al. | Comparative studies on damages to organic layer during the deposition of ITO films by various sputtering methods | |
Jesuraj et al. | Enhanced device efficiency in organic light-emitting diodes by dual oxide buffer layer | |
Liu et al. | Improved color quality in double-EML WOLEDs by using a tetradentate Pt (II) complex as a green/red emitter | |
Yasuda et al. | Top-emission organic light emitting diode with indium tin oxide top-electrode films deposited by a low-damage facing-target type sputtering method | |
Tsai et al. | Improved hole-injection and external quantum efficiency of organic light-emitting diodes using an ultra-thin K-doped NiO buffer layer | |
Kao et al. | Improved efficiency of organic light-emitting diodes using CoPc buffer layer | |
Lin et al. | Investigation of top-emitting OLEDs using molybdenum oxide as anode buffer layer | |
Uchida et al. | Cesium-incorporated indium-tin-oxide films for use as a cathode with low work function for a transparent organic light-emitting device | |
KR101574152B1 (en) | Method for manufacturing inverted oled | |
Woo et al. | Influence of nickel oxide nanolayer and doping in organic light-emitting devices | |
Yang et al. | Surface modification of indium tin oxide anode with self-assembled monolayer modified Ag film for improved OLED device characteristics | |
Han et al. | Electron injection enhancement by diamond-like carbon film in organic electroluminescence devices | |
Zhao et al. | Performance enhancement of organic light-emitting diodes by chlorinated indium tin oxide in the presence of hydrogen peroxide | |
Kao et al. | Improved electron injection into Alq3 based OLEDs using a thin lithium carbonate buffer layer | |
Grover et al. | Novel organic electron injection layer for efficient and stable organic light emitting diodes | |
Dangtip et al. | Study of low power deposition of ITO for top emission OLED with facing target and RF sputtering systems | |
Ding et al. | Pure blue emission from undoped organic light emitting diode based on anthracene derivative | |
Matsushima et al. | Bright electroluminescence from single-layer organic light-emitting diodes comprising an ambipolar carrier transport layer of phenyldipyrenylphosphine oxide | |
Qu et al. | Transparent organic light-emitting diodes with LiF: Al composite cathodes | |
Jiang et al. | Optimizing the combination of MoO3 interface layer and low pressure plasma treatment on indium tin oxide (ITO) anode | |
Kim et al. | High efficiency blue organic light emitting devices doped by BCzVBi in hole and electron transport layer | |
Wang et al. | Efficient organic light-emitting diodes with Teflon as buffer layer | |
Ho | Dramatically improved lifetime operation and luminous efficiency for flexible organic light-emitting devices by oxygen plasma and nitrogen treatments |