Kang et al., 2002 - Google Patents
Memory Retention Charateristics of MFMIS Structure Using SBT and Al 2 O 3 Buffer LayerKang et al., 2002
- Document ID
- 891367210330665282
- Author
- Kang S
- Ishiwara H
- Publication year
- Publication venue
- Ferroelectrics
External Links
Snippet
For FeRAM (Ferroelectric Random Access Memory) applications, good data retention characteristics and superior reliability will be greatly required. In order to fabricate MFMIS (Metal-Ferroelectrics-Metal-Insulator-Si) structure diodes which are capable of changing …
- 230000014759 maintenance of location 0 title abstract description 13
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