[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

Ito et al., 2017 - Google Patents

Silica imprint templates with concave patterns from single-digit nanometers fabricated by electron beam lithography involving argon ion beam milling

Ito et al., 2017

Document ID
8911699934410332867
Author
Ito S
Kikuchi E
Watanabe M
Sugiyama Y
Kanamori Y
Nakagawa M
Publication year
Publication venue
Japanese Journal of Applied Physics

External Links

Snippet

To maintain the silica surface of imprint templates without a fluorine-containing passivation layer on sidewalls after dry etching, we investigated whether a physical dry etching process entailing exposure to Ar ion beam is useful for the fabrication of silica templates. An almost …
Continue reading at iopscience.iop.org (other versions)

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Exposure apparatus for microlithography
    • G03F7/708—Construction of apparatus, e.g. environment, hygiene aspects or materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Exposure apparatus for microlithography
    • G03F7/70058—Mask illumination systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Exposure apparatus for microlithography
    • G03F7/70216—Systems for imaging mask onto workpiece
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultra-violet [EUV] masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/14—Originals characterised by structural details, e.g. supports, cover layers, pellicle rings

Similar Documents

Publication Publication Date Title
US8551566B2 (en) Directed material assembly
Ito et al. Silica imprint templates with concave patterns from single-digit nanometers fabricated by electron beam lithography involving argon ion beam milling
Verschuuren et al. Nanoscale spatial limitations of large-area substrate conformal imprint lithography
Cattoni et al. Soft UV-NIL at 20 nm scale using flexible bi-layer stamp casted on HSQ master mold
Con et al. Nanofabrication of high aspect ratio structures using an evaporated resist containing metal
Flatabø et al. Exploring proximity effects and large depth of field in helium ion beam lithography: large-area dense patterns and tilted surface exposure
Hu et al. Nano-fabrication with a flexible array of nano-apertures
Li et al. Novel Sn-based photoresist for high aspect ratio patterning
Asano et al. Metrology and inspection required for next generation lithography
Miyazoe et al. Highly selective dry etching of polystyrene-poly (methyl methacrylate) block copolymer by gas pulsing carbon monoxide-based plasmas
Jung et al. Plasmonic lithography for fabricating nanoimprint masters with multi-scale patterns
Constantoudis et al. Line-edge-roughness transfer during plasma etching: modeling approaches and comparison with experimental results
Kazazis et al. Achromatic Talbot lithography with nano-ring masks for high-throughput periodic patterning
Sun et al. A low-cost and high-efficiency method for four-inch silicon nano-mold by proximity UV exposure
Jung et al. Mapping of near field light and fabrication of complex nanopatterns by diffraction lithography
US10127336B2 (en) Method of simulating formation of lithography features by self-assembly of block copolymers
Suzuki et al. Electrical evaluation of copper damascene interconnects based on nanoimprint lithography compared with ArF immersion lithography for back-end-of-line process
Hector et al. Printability of sub‐150 nm features in x‐ray lithography: Theory and experiments
KR100869546B1 (en) Fabrication method of thin film pattern using atomic force microscope lithography
Lausecker et al. Anisotropic remastering for reducing feature sizes on UV nanoimprint lithography replica molds
Higo et al. High Throughput 16 NM Nanogap by Variable Shaped Beam Method Using F7000S-VD02 EB Lithography
Yang et al. New EUV mask blank for N3 technology node and beyond
Škriniarová et al. Standard AZ 5214E photoresist in laser interference and EBDW lithographies
JP6206632B2 (en) Nanoimprint blanks and method for producing nanoimprint templates
Pandolfi et al. Using resonant soft x-ray scattering to image patterns on undeveloped resists