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Yamaguchi et al., 2004 - Google Patents

Band diagram and carrier conduction mechanisms in ZrO/sub 2/MIS structures

Yamaguchi et al., 2004

Document ID
8813341858613954566
Author
Yamaguchi T
Satake H
Fukushima N
Publication year
Publication venue
IEEE Transactions on Electron Devices

External Links

Snippet

Energy-band diagrams and carrier-conduction mechanisms in ZrO/sub 2/dielectrics were investigated by using X-ray photoemission spectroscopy and carrier separation measurements for ZrO/sub 2//Zr-silicate/Si structures. It was found that the carrier conduction …
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    • H01L29/66Types of semiconductor device; Multistep manufacturing processes therefor
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    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/778Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
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    • H01L29/511Insulating materials associated therewith with a compositional variation, e.g. multilayer structures
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    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
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