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Mattauch et al., 1967 - Google Patents

The effects of Co60 gamma radiation on MOS diodes

Mattauch et al., 1967

Document ID
871001293243330438
Author
Mattauch R
Lade R
Publication year
Publication venue
IEEE Transactions on Nuclear Science

External Links

Snippet

MOS diodes were fabricated on silicon substrates and exposed to Co60 gamma radiation. A change in both surface state density and oxide charge density was noted. Non-irradiation annealing studies were carried out to determine the nature of the oxide charge. It was …
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