[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

Putkonen et al., 2009 - Google Patents

Atomic layer deposition of lithium containing thin films

Putkonen et al., 2009

Document ID
8706486879542368949
Author
Putkonen M
Aaltonen T
Alnes M
Sajavaara T
Nilsen O
Fjellvåg H
Publication year
Publication venue
Journal of Materials Chemistry

External Links

Snippet

Five different lithium containing compounds, all representing different chemical systems, were studied in order to deposit lithium containing films by atomic layer deposition ALD. The studied compounds were a lithium β-diketonate Li (thd)(thd= 2, 2, 6, 6-tetramethyl-3, 5 …
Continue reading at pubs.rsc.org (other versions)

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40Oxides
    • C23C16/405Oxides of refractory metals or yttrium
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523Pulsed gas flow or change of composition over time
    • C23C16/45525Atomic layer deposition [ALD]
    • C23C16/45553Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01PINDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00Crystal-structural characteristics
    • C01P2002/70Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data
    • C01P2002/72Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data by d-values or two theta-values, e.g. as X-ray diagram
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01MPROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL INTO ELECTRICAL ENERGY
    • H01M4/00Electrodes
    • H01M4/02Electrodes composed of or comprising active material
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01PINDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00Crystal-structural characteristics
    • C01P2002/80Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70
    • C01P2002/85Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70 by XPS, EDX or EDAX data

Similar Documents

Publication Publication Date Title
Putkonen et al. Atomic layer deposition of lithium containing thin films
Aaltonen et al. Lanthanum titanate and lithium lanthanum titanate thin films grown by atomic layer deposition
Blanquart et al. Atomic layer deposition and characterization of vanadium oxide thin films
Hatanpää et al. Precursors as enablers of ALD technology: Contributions from University of Helsinki
Van de Kerckhove et al. Molecular layer deposition of “vanadicone”, a vanadium-based hybrid material, as an electrode for lithium-ion batteries
Miikkulainen et al. Atomic layer deposition of Li x Ti y O z thin films
Johnson et al. Recent developments in molecular precursors for atomic layer deposition
Hornsveld et al. Plasma-assisted and thermal atomic layer deposition of electrochemically active Li 2 CO 3
Nilsen et al. Atomic layer deposition of functional films for Li‐ion microbatteries
Meng et al. Atomic layer deposited Li 4 Ti 5 O 12 on nitrogen-doped carbon nanotubes
Østreng et al. Atomic layer deposition of lithium nitride and carbonate using lithium silylamide
Niinistö et al. Controlled growth of HfO 2 thin films by atomic layer deposition from cyclopentadienyl-type precursor and water
Nazarov et al. Atomic layer deposition of tin oxide using tetraethyltin to produce high-capacity Li-ion batteries
Shemkunas et al. Rapid Synthesis of Crystalline Spinel Tin Nitride by a Solid‐State Metathesis Reaction
Sønsteby et al. tert-butoxides as precursors for atomic layer deposition of alkali metal containing thin films
WO2013011297A1 (en) Method
Nam et al. Semiconducting TiO2− xSx thin films by atomic layer deposition of TiS2 and its oxidation in ambient
Heiska et al. Atomic/molecular layer deposition and electrochemical performance of dilithium 2-aminoterephthalate
Xie et al. Planar and 3D deposition of Li4Ti5O12 thin film electrodes by MOCVD
Bönhardt et al. Formation of highly conformal spinel lithium titanate thin films based on a novel three-step atomic layer deposition process
Nam et al. Atomic layer deposition of ZrO2 thin films using dichlorobis [bis‐(trimethylsilyl) amido] zirconium and water
Miikkulainen et al. Atomic layer deposited lithium aluminum oxide:(In) dependency of film properties from pulsing sequence
Tyagi et al. Di-tert-butyltin (iv) 2-pyridyl and 4, 6-dimethyl-2-pyrimidyl thiolates: versatile single source precursors for the preparation of SnS nanoplatelets as anode material for lithium ion batteries
Nieminen et al. Intercalation of lithium ions from gaseous precursors into β-MnO2 thin films deposited by atomic layer deposition
Young et al. Rapid growth of crystalline Mn5O8 by self-limited multilayer deposition using Mn (EtCp) 2 and O3