Zijie et al., 2014 - Google Patents
A 0.5–6 GHz 360° vector-sum phase shifter in 0.13-µm CMOSZijie et al., 2014
View PDF- Document ID
- 8644539643204576016
- Author
- Zijie H
- Mouthaan K
- Publication year
- Publication venue
- 2014 IEEE MTT-S International Microwave Symposium (IMS2014)
External Links
Snippet
A 0.5–6 GHz CMOS vector-sum phase shifter with a full 360° phase range is presented. Employing phase-reversible variable gain amplifiers (VGAs), for simultaneous amplitude and polarity control, the phase shifter realizes a continuously tunable phase shift of 360° …
- 239000012071 phase 0 description 45
Classifications
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/45—Differential amplifiers
- H03F3/45071—Differential amplifiers with semiconductor devices only
- H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
- H03F3/45179—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
- H03F3/45183—Long tailed pairs
- H03F3/45188—Non-folded cascode stages
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/45—Differential amplifiers
- H03F3/45071—Differential amplifiers with semiconductor devices only
- H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
- H03F3/45179—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
- H03F3/45197—Pl types
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/45—Differential amplifiers
- H03F3/45071—Differential amplifiers with semiconductor devices only
- H03F3/45479—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection
- H03F3/45928—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection using IC blocks as the active amplifying circuit
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F3/211—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/45—Indexing scheme relating to differential amplifiers
- H03F2203/45138—Two or more differential amplifiers in IC-block form are combined, e.g. measuring amplifiers
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
- H03D7/00—Transference of modulation from one carrier to another, e.g. frequency-changing
- H03D7/14—Balanced arrangements
- H03D7/1425—Balanced arrangements with transistors
- H03D7/1441—Balanced arrangements with transistors using field-effect transistors
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
- H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
- H03F1/0294—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers using vector summing of two or more constant amplitude phase-modulated signals
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
- H03D2200/00—Indexing scheme relating to details of demodulation or transference of modulation from one carrier to another covered by H03D
- H03D2200/0041—Functional aspects of demodulators
- H03D2200/0088—Reduction of intermodulation, nonlinearities, adjacent channel interference; intercept points of harmonics or intermodulation products
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
- H03D7/00—Transference of modulation from one carrier to another, e.g. frequency-changing
- H03D7/14—Balanced arrangements
- H03D7/1425—Balanced arrangements with transistors
- H03D7/1433—Balanced arrangements with transistors using bipolar transistors
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H11/00—Networks using active elements
- H03H11/02—Multiple-port networks
- H03H11/32—Balance-unbalance networks
Similar Documents
Publication | Publication Date | Title |
---|---|---|
Zijie et al. | A 0.5–6 GHz 360° vector-sum phase shifter in 0.13-µm CMOS | |
Zhu et al. | A 21 to 30-GHz merged digital-controlled high resolution phase shifter-programmable gain amplifier with orthogonal phase and gain control for 5-G phase array application | |
Mannem et al. | A reconfigurable hybrid series/parallel Doherty power amplifier with antenna VSWR resilient performance for MIMO arrays | |
Koh et al. | A 6–18 GHz 5-bit active phase shifter | |
CN107863949B (en) | X-band 5-phase shifter based on combination of active phase shifter and passive phase shifter | |
Sarkas et al. | W-band 65-nm CMOS and SiGe BiCMOS transmitter and receiver with lumped IQ phase shifters | |
Lee et al. | A 120 GHz I/Q transmitter front-end in a 40 nm CMOS for wireless chip to chip communication | |
US7808316B2 (en) | Wideband differential amplifier including single-ended amplifiers coupled to a four-port transformer | |
Deferm et al. | A 100 GHz transformer-coupled fully differential amplifier in 90 nm CMOS | |
Wu et al. | A 60-GHz single-ended-to-differential vector sum phase shifter in CMOS for phased-array receiver | |
Quan et al. | A 275 GHz active vector-sum phase shifter | |
Franzese et al. | Vector modulator phase shifters in 130-nm SiGe BiCMOS technology for 5G applications | |
Drenkhahn et al. | A V-Band vector modulator based phase shifter in BiCMOS 0.13 µm SiGe technology | |
Elkhouly et al. | 120 GHz phased-array circuits in 0.25 µm SiGe BiCMOS technology | |
Kibaroglu et al. | An X-band 6-bit active phase shifter | |
Smirnova et al. | W-band 6-bit active phase shifter using differential Lange coupler in SiGe BiCMOS | |
Yu et al. | A 60-GHz vector summing phase shifter with digital tunable current-splitting and current-reuse techniques in 90 nm CMOS | |
Sah et al. | An ultra-wideband 15–35 GHz phase-shifter for beamforming applications | |
Balashov et al. | An unbalanced transformerless vector-sum phase shifter architecture | |
Duan et al. | A 6-bit CMOS phase shifter with active balun and three-stage poly-phase filter for phased arrays | |
Sun et al. | A 360 degree phase shifter for 60 GHz application in SiGe BiCMOS technology | |
JP2008311863A (en) | Multiple-input and multiple-output amplifier, and active inductor, filter and radio communication equipment using the same | |
Liu et al. | A 30-88 GHz Phase Shifter with Broadband 90° Hybrid-Marchand Balun Network and Common-base Buffer Achieving 1.34-3.1° RMS Phase Error in 90 nm SiGe | |
Zhang et al. | A 77-101GHz 6-bit vector-modulated phase shifter with low rms error in 65nm SOI CMOS | |
Greene et al. | Dual-vector phase rotator for Doherty beamformers |