[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

Vickers et al., 2005 - Google Patents

In-plane imperfections in GaN studied by x-ray diffraction

Vickers et al., 2005

Document ID
8595406440972757726
Author
Vickers M
Kappers M
Datta R
McAleese C
Smeeton T
Rayment F
Humphreys C
Publication year
Publication venue
Journal of Physics D: Applied Physics

External Links

Snippet

We have studied a series of GaN films grown with a range of dislocation densities by atomic force microscopy (AFM), transmission electron microscopy (TEM) and high resolution x-ray diffraction (HRXRD). The (002),(004),(006),(105),(204),(302),(100),(110),(200) and (300) …
Continue reading at iopscience.iop.org (other versions)

Classifications

    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02529—Silicon carbide
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02496—Layer structure
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/02433—Crystal orientation
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L2021/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
    • H01L2021/60007—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation involving a soldering or an alloying process
    • H01L2021/60022—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation involving a soldering or an alloying process using bump connectors, e.g. for flip chip mounting
    • H01L2021/60097—Applying energy, e.g. for the soldering or alloying process
    • H01L2021/60172—Applying energy, e.g. for the soldering or alloying process using static pressure

Similar Documents

Publication Publication Date Title
Vickers et al. In-plane imperfections in GaN studied by x-ray diffraction
Chierchia et al. Microstructure of heteroepitaxial GaN revealed by x-ray diffraction
Bryan et al. Strain relaxation by pitting in AlN thin films deposited by metalorganic chemical vapor deposition
Österlund et al. Stability and residual stresses of sputtered wurtzite AlScN thin films
JP7527424B2 (en) Single crystal zinc blende group III nitrides
Pandey et al. Growth and comparison of residual stress of AlN films on silicon (100),(110) and (111) substrates
Matsunami et al. XRD characterization of AlN thin films prepared by reactive RF-sputter deposition
Mynbaeva et al. Strain relaxation in GaN layers grown on porous GaN sublayers
Ratnikov et al. Bragg and Laue x-ray diffraction study of dislocations in thick hydride vapor phase epitaxy GaN films
Gallheber et al. Growth, stress, and defects of heteroepitaxial diamond on Ir/YSZ/Si (111)
Moram et al. Growth of dislocation-free GaN islands on Si (1 1 1) using a scandium nitride buffer layer
Moram et al. Young’s modulus, Poisson’s ratio, and residual stress and strain in (111)-oriented scandium nitride thin films on silicon
Bläsing et al. Oxygen induced strain field homogenization in AlN nucleation layers and its impact on GaN grown by metal organic vapor phase epitaxy on sapphire: An x-ray diffraction study
Bensalah et al. Mosaicity, dislocations and strain in heteroepitaxial diamond grown on iridium
Yoshikawa et al. Wafer bowing control of free-standing heteroepitaxial diamond (100) films grown on Ir (100) substrates via patterned nucleation growth
Benzarti et al. Growth temperature effect on physical and mechanical properties of nitrogen rich InN epilayers
Kobayashi et al. X-ray rocking curve determination of twist and tilt angles in GaN films grown by an epitaxial-lateral-overgrowth technique
Sulich et al. Unit cell distortion and surface morphology diversification in a SnTe/CdTe (001) topological crystalline insulator heterostructure: influence of defect azimuthal distribution
Faleev et al. Depth dependence of defect density and stress in GaN grown on SiC
Paskova et al. Growth and separation related properties of HVPE-GaN free-standing films
Chine et al. Stress and density of defects in Si‐doped GaN
Heinke et al. X-ray scattering from GaN epitaxial layers-an example of highly anisotropic coherence
Moram et al. The effect of wafer curvature on x-ray rocking curves from gallium nitride films
Barchuk et al. Effect of screw threading dislocations and inverse domain boundaries in GaN on the shape of reciprocal-space maps
Bosi et al. Defect structure and strain reduction of 3C-SiC/Si layers obtained with the use of a buffer layer and methyltrichlorosilane addition