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Mino et al., 2012 - Google Patents

Characteristics of epitaxial lateral overgrowth AlN templates on (111) Si substrates for AlGaN deep‐UV LEDs fabricated on different direction stripe patterns

Mino et al., 2012

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Document ID
8581683517706663024
Author
Mino T
Hirayama H
Takano T
Tsubaki K
Sugiyama M
Publication year
Publication venue
physica status solidi c

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Snippet

We investigated the characteristics of epitaxial lateral overgrowth (ELO) AlN templates fabricated on Si substrates which are applicable to AlGaN‐based deep ultraviolet (DUV) light‐emitting diodes (LEDs). ELO‐AlN layers were grown on stripe‐patterned thin AlN seed …
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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
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    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
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    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
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    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
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    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
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