Hess et al., 2001 - Google Patents
Selective laser desorption of ionic surfaces: Resonant surface excitation of KBrHess et al., 2001
- Document ID
- 8551287132680871809
- Author
- Hess W
- Joly A
- Gerrity D
- Beck K
- Sushko P
- Shluger A
- Publication year
- Publication venue
- The Journal of Chemical Physics
External Links
Snippet
We demonstrate evidence of selective laser-induced desorption of ground state Br (2 P 3/2) and spin–orbit excited state Br (2 P 1/2) atoms from KBr single crystals following 6.4 eV irradiation. Laser excitation tuned selectively to a surface resonance below the first bulk …
- 230000005284 excitation 0 title abstract description 76
Classifications
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
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