Ori et al., 2016 - Google Patents
Cooperative topological accumulation of vacancies in honeycomb latticesOri et al., 2016
View PDF- Document ID
- 8512888519987152252
- Author
- Ori O
- Cataldo F
- Putz M
- Kaatz F
- Bultheel A
- Publication year
- Publication venue
- Fullerenes, Nanotubes and Carbon Nanostructures
External Links
Snippet
Present topological study focuses on the formation mechanism of clusters of vacancies in graphenic layers. An original effect that explains both accumulation and self-healing of vacancies represents the original outcome of our investigation whose results, based on the …
- 210000003660 Reticulum 0 title abstract description 54
Classifications
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING; COUNTING
- G06F—ELECTRICAL DIGITAL DATA PROCESSING
- G06F17/00—Digital computing or data processing equipment or methods, specially adapted for specific functions
- G06F17/30—Information retrieval; Database structures therefor; File system structures therefor
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING; COUNTING
- G06N—COMPUTER SYSTEMS BASED ON SPECIFIC COMPUTATIONAL MODELS
- G06N99/00—Subject matter not provided for in other groups of this subclass
- G06N99/005—Learning machines, i.e. computer in which a programme is changed according to experience gained by the machine itself during a complete run
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Kapil et al. | The first-principles phase diagram of monolayer nanoconfined water | |
| Mu et al. | Thermal transport in graphene oxide–from ballistic extreme to amorphous limit | |
| Kamban et al. | Interlayer excitons in van der Waals heterostructures: Binding energy, Stark shift, and field-induced dissociation | |
| Crisostomo et al. | Robust large gap two-dimensional topological insulators in hydrogenated III–V buckled honeycombs | |
| Gao et al. | Initial geometries, interaction mechanism and high stability of silicene on Ag (111) surface | |
| Putz et al. | Bondonic effects in group-IV honeycomb nanoribbons with Stone-Wales topological defects | |
| Ori et al. | Cooperative topological accumulation of vacancies in honeycomb lattices | |
| Wagner | Quantum Monte Carlo for Ab Initio calculations of energy‐relevant materials | |
| Gu et al. | Prediction of two‐dimensional materials by the global optimization approach | |
| Lee et al. | Quasi-Fermi level splitting in nanoscale junctions from ab initio | |
| Carbone et al. | Monte Carlo modeling of transport in PbSe nanocrystal films | |
| Fan et al. | Combining linear-scaling quantum transport and machine-learning molecular dynamics to study thermal and electronic transports in complex materials | |
| Galashev et al. | An Ab initio study of lithization of two-dimensional silicon–carbon anode material for lithium-ion batteries | |
| Srivastava et al. | Ab initio investigations on planar (MgO) n clusters (n= 1–5) and their hydrogen adsorption behaviour | |
| Childres et al. | Combined Raman spectroscopy and magneto-transport measurements in disordered graphene: Correlating Raman D band and weak localization features | |
| Pincak et al. | Electronic properties of Bilayer Fullerene onions | |
| Kuo | Effects of coulomb blockade on the charge transport through the topological states of finite armchair graphene nanoribbons and heterostructures | |
| Cheranovskii et al. | Magnetic Properties of Quasi-One-Dimensional Crystals Formed by Graphene Nanoclusters and Embedded Atoms of the Transition Metals | |
| Ganji et al. | First-principles investigation on the formation of endohedral complexes between CH4 molecules and Si60 fullerene nanocage | |
| Gromov et al. | Influence of caged noble-gas atom on the superatomic and valence states of C60− | |
| Gosálvez et al. | Microscopic origin of the apparent activation energy in diffusion-mediated monolayer growth of two-dimensional materials | |
| Parisi et al. | Role of h distribution on coherent quantum transport of electrons in hydrogenated graphene | |
| Castiglione et al. | Non-parabolic band hydrodynamic model for silicon quantum wires | |
| Nayebi et al. | Study of graphene device electronic properties with horizontal and vertical double vacancy defects | |
| Pantis-Simut et al. | Electric-field control in phosphorene-based heterostructures |