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Zeng et al., 2017 - Google Patents

Effect of radiation on reliability of through-Silicon via for 3-D packaging systems

Zeng et al., 2017

Document ID
847463744505164717
Author
Zeng Q
Chen J
Jin Y
Publication year
Publication venue
IEEE Transactions on Device and Materials Reliability

External Links

Snippet

In this paper, radiation reliability of through-silicon via (TSV) was studied experimentally. Characterization of leakage current between adjacent TSVs and capacitance of an array of TSVs was used to evaluate the effects of radiation on reliability of TSVs. All samples were …
Continue reading at ieeexplore.ieee.org (other versions)

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    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
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