Shimazaki et al., 1991 - Google Patents
Chemical analysis of silicon wafer surface contaminationShimazaki et al., 1991
View HTML- Document ID
- 836564228782012119
- Author
- Shimazaki A
- Bullis M
- Gosele U
- Shimura F
- Publication year
- Publication venue
- Proc. Electrochem. Soc., Defects in Silicon II, ed. M. Bullis, U. Gosele, and F. Shimura
External Links
Snippet
A new approach for surface contamination analysis, WSA (Wafer Surface Analysis) is introduced, which is, at present, the most sensitive method for quantifying contaminants on wafer surfaces. Also, the possible improvement of sensitivity and the necessity of clarifying …
- 238000011109 contamination 0 title abstract description 35
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N1/00—Sampling; Preparing specimens for investigation
- G01N1/28—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
- G01N1/40—Concentrating samples
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using infra-red, visible or ultra-violet light
- G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
- G01N21/71—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light thermally excited
- G01N21/74—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light thermally excited using flameless atomising, e.g. graphite furnaces
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N1/00—Sampling; Preparing specimens for investigation
- G01N1/02—Devices for withdrawing samples
- G01N1/22—Devices for withdrawing samples in the gaseous state
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N1/00—Sampling; Preparing specimens for investigation
- G01N1/02—Devices for withdrawing samples
- G01N2001/028—Sampling from a surface, swabbing, vaporising
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N30/00—Investigating or analysing materials by separation into components using adsorption, absorption or similar phenomena or using ion-exchange, e.g. chromatography or field flow fractionation
- G01N30/02—Column chromatography
- G01N30/04—Preparation or injection of sample to be analysed
- G01N30/06—Preparation
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N1/00—Sampling; Preparing specimens for investigation
- G01N1/02—Devices for withdrawing samples
- G01N1/04—Devices for withdrawing samples in the solid state, e.g. by cutting
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electro-chemical, or magnetic means
- G01N27/02—Investigating or analysing materials by the use of electric, electro-chemical, or magnetic means by investigating the impedance of the material
- G01N27/04—Investigating or analysing materials by the use of electric, electro-chemical, or magnetic means by investigating the impedance of the material by investigating resistance
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N30/00—Investigating or analysing materials by separation into components using adsorption, absorption or similar phenomena or using ion-exchange, e.g. chromatography or field flow fractionation
- G01N30/02—Column chromatography
- G01N30/62—Detectors specially adapted therefor
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using infra-red, visible or ultra-violet light
- G01N21/84—Systems specially adapted for particular applications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electro-chemical, or magnetic means
- G01N27/26—Investigating or analysing materials by the use of electric, electro-chemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N23/00—Investigating or analysing materials by the use of wave or particle radiation not covered by G01N21/00 or G01N22/00, e.g. X-rays or neutrons
- G01N23/22—Investigating or analysing materials by the use of wave or particle radiation not covered by G01N21/00 or G01N22/00, e.g. X-rays or neutrons by measuring secondary emission
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR910006220B1 (en) | Impurity measuring method and apparatus | |
JP3179175B2 (en) | Analysis pretreatment method | |
KR100749144B1 (en) | Method for evaluating concentration of metallic impurities in silicon wafer | |
US5298860A (en) | Method of analyzing metal impurities in surface oxide film of semiconductor substrate | |
JPH0658927B2 (en) | Method for analyzing semiconductor thin film and device for collecting sample for analysis | |
Shimazaki et al. | Chemical analysis of silicon wafer surface contamination | |
JP2004028787A (en) | Total reflection fluorescent x-ray analysis method, total reflection fluorescent x-ray analysis pretreatment device, and total reflection fluorescent x-ray analyzer | |
JP3690484B2 (en) | Method for analyzing metal impurities on silicon substrate surface | |
JP2716923B2 (en) | Measurement method for organic substances adsorbed on semiconductor substrate surface | |
JP2001242052A (en) | Method for analyzing impurity in semiconductor substrate or chemicals | |
US6911096B2 (en) | Method of collecting impurities on surface of semiconductor wafer | |
Wang et al. | Analytical techniques for trace elemental analyses on wafer surfaces for monitoring and controlling contamination | |
US5055413A (en) | Method of measuring impurities in oxide films using a meltable sample collection stick | |
JP4204434B2 (en) | Method and apparatus for recovering object to be measured around wafer | |
JP2005249546A (en) | Analysis method for metal element on wafer surface | |
Corradi et al. | Surface contamination detection below the ppb range on silicon wafers | |
JPH07159293A (en) | Method and apparatus for analyzing surface | |
Muller et al. | TSC in HgI2 crystals grown by solution and vapor phase techniques | |
US7399635B2 (en) | Impurity measuring method for Ge substrates | |
JP4232457B2 (en) | Method for analyzing metal impurities in surface oxide film on silicon substrate surface | |
JP3257125B2 (en) | Analysis method using decomposition solution | |
Shiraiwa et al. | Chemical analysis of metallic impurity on the surface of silicon wafers | |
JPH0972836A (en) | Method and apparatus for preparation of sample for total-reflection fluorescent x-ray analysis | |
JP3298918B2 (en) | Analysis method using decomposition solution and analyzer | |
JP2002289660A (en) | Method for evaluating semiconductor wafer and its evaluation apparatus |