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Legallais et al., 2017 - Google Patents

Toward the integration of Si nanonets into FETs for biosensing applications

Legallais et al., 2017

Document ID
8315787573469501801
Author
Legallais M
Nguyen T
Mouis M
Salem B
Ternon C
Publication year
Publication venue
2017 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)

External Links

Snippet

This paper reports on the first integration of silicon nanonet into long channel field effect transistors using standard optical microelectronic methods. The electrical characteristics of these devices constituted by randomly oriented silicon nanowires are also studied …
Continue reading at ieeexplore.ieee.org (other versions)

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    • H01L29/66409—Unipolar field-effect transistors
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    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
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