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De Jaeger et al., 2012 - Google Patents

Au-free CMOS-compatible AlGaN/GaN HEMT processing on 200 mm Si substrates

De Jaeger et al., 2012

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Document ID
8278951180170264342
Author
De Jaeger B
Van Hove M
Wellekens D
Kang X
Liang H
Mannaert G
Geens K
Decoutere S
Publication year
Publication venue
2012 24th International Symposium on Power Semiconductor Devices and ICs

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Au-free CMOS-compatible AlGaN/GaN HEMT devices have been processed on 200 mm Si substrates u sing a typical CMOS tool set. This paper addresses the challenges with respect to the AlGaN/GaN epitaxy, the processing of thick and bowed 200 mm GaN-on-Si wafers, the …
Continue reading at www.researchgate.net (PDF) (other versions)

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    • H01L29/778Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H01L29/7786Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
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