[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

Priya et al., 2024 - Google Patents

A Low Power and Low Noise, Self Body Biased Low Noise Amplifier

Priya et al., 2024

Document ID
8236788173928296315
Author
Priya J
Bhatt D
Publication year
Publication venue
2024 37th International Conference on VLSI Design and 2024 23rd International Conference on Embedded Systems (VLSID)

External Links

Snippet

In this article, a low-power, low-noise, self-forward-body-biased LNA is proposed. The proposed LNA uses inverter-based, body-biased gm-boosting techniques. In order to lower the threshold voltage for low power consumption, two resistors are employed for body bias …
Continue reading at ieeexplore.ieee.org (other versions)

Classifications

    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F1/00Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H03F1/0261Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the polarisation voltage or current, e.g. gliding Class A
    • H03F1/0272Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the polarisation voltage or current, e.g. gliding Class A by using a signal derived from the output signal
    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45Differential amplifiers
    • H03F3/45071Differential amplifiers with semiconductor devices only
    • H03F3/45076Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/45179Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189High frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/193High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F1/00Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/08Modification of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
    • H03F1/22Modification of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively
    • H03F1/223Modification of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively with MOSFET's
    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F2203/00Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45Indexing scheme relating to differential amplifiers
    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/04Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
    • H03F3/16Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only with field-effect devices
    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F2200/00Indexing scheme relating to amplifiers
    • H03F2200/451Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03GCONTROL OF AMPLIFICATION
    • H03G1/00Details of arrangements for controlling amplification

Similar Documents

Publication Publication Date Title
US7928804B2 (en) Power amplifier
Chen et al. A 0.1–20 GHz low-power self-biased resistive-feedback LNA in 90 nm digital CMOS
US7348855B2 (en) Bias circuitry for cascode transistor circuit
Hsieh et al. A 0.6-V Low-Power Variable-Gain LNA in 0.18-$\mu $ m CMOS Technology
Shi et al. A 0.1-3.4 GHz LNA with multiple feedback and current-reuse technique based on 0.13-μm SOI CMOS
Chang et al. Ultra-low voltage and low power UWB CMOS LNA using forward body biases
Chang et al. Dual cross-coupling LNA with forward body bias technique
Priya et al. A Low Power and Low Noise, Self Body Biased Low Noise Amplifier
Joshi et al. Performance analysis of Radio Frequency (RF) low noise amplifier (LNA) with various transistor configurations
Hsieh et al. A 0.6-V 336-μW 5-GHz LNA using a low-voltage and gain-enhancement architecture
Guo et al. Low power UWB CMOS LNA using resistive feedback and current-reused techniques under forward body bias
Zafarian et al. A 0.4 V 790μw CMOS low noise amplifier in sub-threshold region at 1.5 GHz
Diangco et al. 83.17% Power Conversion Efficiency, 13.5 dB Power Dynamic Range Rectifier for RF Energy Harvesting Applications in 22nm FDSOI Technology
JP3517765B2 (en) RF power amplifier circuit and mobile communication terminal device
Mubashir et al. A 2–10 GHz ultra-wideband common-gate low noise amplifier using body bias technique in 0.18 μm CMOS
Hsu et al. Systematic approaches of UWB low-power CMOS LNA with body biased technique
Song et al. A 0.6 V 2.1–6.2 GHz low-power CMOS ultra-wideband low-noise amplifier for low-voltage operations
Hameau et al. New Design Opportunities exploiting FDSOI technology for RF Power Amplifier and LNA design
Ma et al. A Stacked Transistors CMOS SOI Power Amplifier For 5G Applications
JP4322095B2 (en) RF power amplifier module
CN114079428B (en) Tunable differential input cascode low-noise amplifier based on CMOS
US10944363B2 (en) Power amplifier
Helmi et al. A highly efficient mm-Wave CMOS SOI power amplifier
Ramuswaminaath et al. Design, Reliability Investigation and Analysis of 60 GHz band LNA in 65nm CMOS for 5G Mobile Communication
Liu et al. A Wideband Noise-Cancelling Balun Low Noise Amplifier with Self-Adaptive Calibration for Low Power Application