[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

Takeuchi et al., 2022 - Google Patents

Decay time extension of terahertz electromagnetic waves emitted from coherent longitudinal optical phonons in GaAs epitaxial layers with the use of fast atom …

Takeuchi et al., 2022

View HTML
Document ID
8210855991773472660
Author
Takeuchi H
Omuku Y
Onoda R
Nakaoka T
Utsumi J
Kawasaki S
Koyama M
Publication year
Publication venue
Optics Continuum

External Links

Snippet

We succeeded in extending the decay time of terahertz electromagnetic waves from coherent longitudinal optical (LO) phonons in GaAs epitaxial layers with the use of fast atom bombardment, a treatment method for introducing defects and/or disorders at the surface …
Continue reading at opg.optica.org (HTML) (other versions)

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using infra-red, visible or ultra-violet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
    • G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
    • G01N21/35—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infra-red light
    • G01N21/3581—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infra-red light using far infra-red light; using Terahertz radiation
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using infra-red, visible or ultra-violet light
    • G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
    • G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
    • G01N21/636—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited using an arrangement of pump beam and probe beam; using the measurement of optical non-linear properties
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L31/00—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101—Devices sensitive to infra-red, visible or ultra-violet radiation
    • H01L31/102—Devices sensitive to infra-red, visible or ultra-violet radiation characterised by only one potential barrier or surface barrier
    • H01L31/105—Devices sensitive to infra-red, visible or ultra-violet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PIN type
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using infra-red, visible or ultra-violet light
    • G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
    • G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
    • G01N21/65—Raman scattering
    • G01N2021/653—Coherent methods [CARS]
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L31/00—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/09—Devices sensitive to infra-red, visible or ultraviolet radiation

Similar Documents

Publication Publication Date Title
Tani et al. Emission characteristics of photoconductive antennas based on low-temperature-grown GaAs and semi-insulating GaAs
Dietz et al. THz generation at 1.55 µm excitation: six-fold increase in THz conversion efficiency by separated photoconductive and trapping regions
Suzuki et al. Fe-implanted InGaAs terahertz emitters for 1.56 μm wavelength excitation
Klatt et al. Terahertz emission from lateral photo-Dember currents
Dietz et al. Influence and adjustment of carrier lifetimes in InGaAs/InAlAs photoconductive pulsed terahertz detectors: 6 THz bandwidth and 90dB dynamic range
Sartorius et al. All-fiber terahertz time-domain spectrometer operating at 1.5 µm telecom wavelengths
Bakker et al. Distortion of terahertz pulses in electro-optic sampling
Roehle et al. Next generation 1.5 µm terahertz antennas: mesa-structuring of InGaAs/InAlAs photoconductive layers
Chimot et al. Terahertz radiation from heavy-ion-irradiated In0. 53Ga0. 47As photoconductive antenna excited at 1.55 μm
Dreyhaupt et al. Optimum excitation conditions for the generation of high-electric-field terahertz radiation from an oscillator-driven photoconductive device
Bao et al. Enhanced spectral response of an AlGaN-based solar-blind ultraviolet photodetector with Al nanoparticles
Hanus et al. Light-field-driven current control in solids with pJ-level laser pulses at 80 MHz repetition rate
Nandi et al. ErAs: In (Al) GaAs photoconductor-based time domain system with 4.5 THz single shot bandwidth and emitted terahertz power of 164 µW
Wood et al. Terahertz emission from metal-organic chemical vapor deposition grown Fe: InGaAs using 830 nm to 1.55 μm excitation
Mingardi et al. High power generation of THz from 1550-nm photoconductive emitters
Tani et al. Photoconductive emission and detection of terahertz pulsed radiation using semiconductors and semiconductor devices
KR20120071382A (en) Generating and detecting radiation
Van Hoof et al. Time-resolved terahertz time-domain near-field microscopy
Fekecs et al. Fabrication of high resistivity cold-implanted InGaAsP photoconductors for efficient pulsed terahertz devices
Mag-Usara et al. Low temperature-grown GaAs carrier lifetime evaluation by double optical pump terahertz time-domain emission spectroscopy
Singh et al. Carbon irradiated semi insulating GaAs for photoconductive terahertz pulse detection
Billet et al. Resonant cavities for efficient LT-GaAs photoconductors operating at λ= 1550 nm
Tsai et al. Terahertz response of GaN thin films
Barnes et al. Terahertz emission by diffusion of carriers and metal-mask dipole inhibition of radiation
Lu et al. Frequency-domain terahertz spectroscopy using long-carrier-lifetime photoconductive antennas