Usami et al., 1980 - Google Patents
Development of High Efficiency Epitaxial Silicon Solar CellsUsami et al., 1980
- Document ID
- 8163916443411475374
- Author
- Usami A
- Ishihara S
- Sugano M
- Publication year
- Publication venue
- Japanese Journal of Applied Physics
External Links
Snippet
The optimum fabrication conditions for npp" and n* npp* types epitaxial silicon solar cells are described. Epitaxial p-base and n-surface npp" and n*-diffused n* npp* solar cell structures were grown on both (111) and (100) oriented single crystalline silicon substrates …
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N silicon data:image/svg+xml;base64,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 data:image/svg+xml;base64,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 [Si] 0 title abstract description 18
Classifications
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L31/00—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/068—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GASES [GHG] EMISSION, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/54—Material technologies
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GASES [GHG] EMISSION, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/54—Material technologies
- Y02E10/543—Solar cells from Group II-VI materials
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L31/00—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L31/00—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L31/00—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/072—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
- H01L31/0735—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising only AIIIBV compound semiconductors, e.g. GaAs/AIGaAs or InP/GainAs solar cells
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L31/00—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infra-red, visible or ultra-violet radiation
- H01L31/102—Devices sensitive to infra-red, visible or ultra-violet radiation characterised by only one potential barrier or surface barrier
- H01L31/105—Devices sensitive to infra-red, visible or ultra-violet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PIN type
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L31/00—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
- H01L31/035281—Shape of the body
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GASES [GHG] EMISSION, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L31/00—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L31/00—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus peculiar to the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus peculiar to the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L31/00—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus peculiar to the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus peculiar to the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L31/00—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L31/00—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
- H01L31/056—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means the light-reflecting means being of the back surface reflector [BSR] type
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L31/00—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus peculiar to the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/142—Energy conversion devices
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L51/00—Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
- H01L51/42—Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for sensing infra-red radiation, light, electro-magnetic radiation of shorter wavelength or corpuscular radiation and adapted for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation using organic materials as the active part, or using a combination of organic materials with other material as the active part; Multistep processes for their manufacture
- H01L51/4213—Comprising organic semiconductor-inorganic semiconductor hetero-junctions
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US4191593A (en) | Double heterojunction solar cells | |
US5405453A (en) | High efficiency multi-junction solar cell | |
Ghosh et al. | Theory of the electrical and photovoltaic properties of polycrystalline silicon | |
US4278474A (en) | Device for conversion of electromagnetic radiation into electrical current | |
Reichman | The current‐voltage characteristics of semiconductor‐electrolyte junction photovoltaic cells | |
US5376185A (en) | Single-junction solar cells with the optimum band gap for terrestrial concentrator applications | |
CA1222043A (en) | Solar cells and photodetectors | |
US20230275167A1 (en) | Solar cell, method for preparing the same, and photovoltaic module | |
Imaizumi et al. | Effect of grain size and dislocation density on the performance of thin film polycrystalline silicon solar cells | |
US5322573A (en) | InP solar cell with window layer | |
US4106951A (en) | Photovoltaic semiconductor device using an organic material as an active layer | |
Gover et al. | Vertical multijunction solar-cell one-dimensional analysis | |
Godfrey et al. | High-efficiency silicon minMIS solar cells—design and experimental results | |
US4122476A (en) | Semiconductor heterostructure | |
Fossum et al. | Silicon solar cell designs based on physical behavior in concentrated sunlight | |
US4249957A (en) | Copper doped polycrystalline silicon solar cell | |
Schwartz | Review of silicon solar cells for high concentrations | |
Singh et al. | Optimization of oxide-semiconductor/base-semiconductor solar cells | |
Saitoh et al. | Polycrystalline indium phosphide solar cells fabricated on molybdenum substrates | |
Hutchby et al. | Theoretical optimization and parametric study of n‐on‐p Al x Ga1− x As‐GaAs graded band‐gap solar cell | |
Usami et al. | Development of High Efficiency Epitaxial Silicon Solar Cells | |
Stangl et al. | Thin film silicon emitters for crystalline silicon solar cells, epitaxial, amorphous or microcrystalline?-a simulation study | |
Pande | Characteristics of MOS solar cells built on (n-type) InP substrates | |
Parekh et al. | Improved performance design of gallium arsenide solar cells for space | |
Sharma et al. | Si and GaAs SIS heterostructure solar cells using spray-deposited ITO |