Hähnel et al., 2013 - Google Patents
Electron microscope verification of prebreakdown-inducing α-FeSi2 needles in multicrystalline silicon solar cellsHähnel et al., 2013
View PDF- Document ID
- 8081849295581090707
- Author
- Hähnel A
- Bauer J
- Blumtritt H
- Breitenstein O
- Lausch D
- Kwapil W
- Publication year
- Publication venue
- Journal of Applied Physics
External Links
Snippet
It had been shown already earlier by X-ray microanalysis that, in positions of defect-induced junction breakdown in industrial multicrystalline (mc) silicon solar cells, iron-containing precipitates may exist. However, the nature of these precipitates was unknown so far. Here …
- 229910005331 FeSi2 0 title abstract 5
Classifications
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies; Multistep manufacturing processes therefor characterised by the materials of which they are formed
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L39/00—Devices using superconductivity; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof
Similar Documents
Publication | Publication Date | Title |
---|---|---|
Hähnel et al. | Electron microscope verification of prebreakdown-inducing α-FeSi2 needles in multicrystalline silicon solar cells | |
Li et al. | From atomic structure to photovoltaic properties in CdTe solar cells | |
Durose et al. | Physical characterization of thin‐film solar cells | |
Ernst et al. | Structure and composition of grain boundaries in ceramics | |
Persson et al. | Structural defects in electrically degraded 4H-SiC p+/n−/n+ diodes | |
Perillat-Merceroz et al. | Formation and annealing of dislocation loops induced by nitrogen implantation of ZnO | |
Bothe et al. | Luminescence emission from forward-and reverse-biased multicrystalline silicon solar cells | |
Maximenko et al. | Cathodoluminescence study of the properties of stacking faults in 4H-SiC homoepitaxial layers | |
Ueda et al. | Structural characterization of defects in EFG-and HVPE-grown β-Ga2O3 crystals | |
Chen et al. | Structural characterization and iron detection at Σ3 grain boundaries in multicrystalline silicon | |
Bauer et al. | Recombination at Lomer dislocations in multicrystalline silicon for solar cells | |
Karzel et al. | Dependence of phosphorus gettering and hydrogen passivation efficacy on grain boundary type in multicrystalline silicon | |
Abou‐Ras et al. | Electron microscopy on thin films for solar cells | |
Sugimoto et al. | Photoluminescence analysis of intragrain defects in multicrystalline silicon wafers for solar cells | |
Sharma et al. | Ion beam modification of topological insulator bismuth selenide | |
Blavette et al. | Investigation of dopant clustering and segregation to defects in semiconductors using atom probe tomography | |
Köhl et al. | Polytypism in GaAs nanowires: determination of the interplanar spacing of wurtzite GaAs by X-ray diffraction | |
Suvorova et al. | Precipitates of MnSi cubic phase in tetragonal Mn 4 Si 7 crystal | |
Gault et al. | High-resolution nanostructural investigation of Zn4Sb3 alloys | |
Bae et al. | Large bi-axial tensile strain effect in epitaxial BiFeO3 film grown on single crystal PrScO3 | |
Zhang et al. | Depth-resolved cathodoluminescence spectroscopy study of defects in SrTiO3 | |
Nacke et al. | Investigations on residual strains and the cathodoluminescence and electron beam induced current signal of grain boundaries in silicon | |
Richter et al. | Growth of carbon and nitrogen containing precipitates in crystalline solar silicon and their influence on solar cells | |
Falkenberg et al. | Localization and preparation of recombination-active extended defects for transmission electron microscopy analysis | |
Zschiesche et al. | Correlated TKD/EDS-TEM-APT analysis on selected interfaces of CoSi2 thin films |