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Yan et al., 2022 - Google Patents

Characterization of thin Al2O3/SiO2 dielectric stack for CMOS transistors

Yan et al., 2022

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Document ID
80761632432142348
Author
Yan Y
Kilchytska V
Wang B
Faniel S
Zeng Y
Raskin J
Flandre D
Publication year
Publication venue
Microelectronic Engineering

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Snippet

This paper systematically investigates the electrical properties of thin Al 2 O 3/SiO 2 (with a target equivalent oxide thickness of 4.9 nm) as gate dielectric stack in the metal–oxide– semiconductor (MOS) capacitor. Different deposition techniques, ie thermal oxidation …
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    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
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