Yao et al., 2005 - Google Patents
Large photo-induced voltage in a ferroelectric thin film with in-plane polarizationYao et al., 2005
- Document ID
- 8051780479318682359
- Author
- Yao K
- Gan B
- Chen M
- Shannigrahi S
- Publication year
- Publication venue
- Applied Physics Letters
External Links
Snippet
A large photoinduced voltage of 7 V was obtained with an in-plane poled ferroelectric thin film having a composition of WO 3 modified Pb 0.97 La 0.03 (Zr 0.52 Ti 0.48) O 3 (PLWZT), under ultraviolet (UV) illumination for about 80 s. By poling the ferroelectric film along the …
- 239000010409 thin film 0 title abstract description 29
Classifications
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L31/00—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies; Multistep manufacturing processes therefor characterised by the materials of which they are formed
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L51/00—Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
- H01L51/0032—Selection of organic semiconducting materials, e.g. organic light sensitive or organic light emitting materials
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
Similar Documents
Publication | Publication Date | Title |
---|---|---|
Yao et al. | Large photo-induced voltage in a ferroelectric thin film with in-plane polarization | |
Qin et al. | High efficient photovoltaics in nanoscaled ferroelectric thin films | |
Qin et al. | Photovoltaic mechanisms in ferroelectric thin films with the effects of the electrodes and interfaces | |
Zheng et al. | Separation of the Schottky barrier and polarization effects on the photocurrent of Pt sandwiched Pb (Zr0. 20Ti0. 80) O3 films | |
Yuan et al. | Evidences for the depletion region induced by the polarization of ferroelectric semiconductors | |
Qin et al. | Photovoltaic characteristics in polycrystalline and epitaxial (Pb0. 97La0. 03)(Zr0. 52Ti0. 48) O3 ferroelectric thin films sandwiched between different top and bottom electrodes | |
Qu et al. | Resistance switching and white-light photovoltaic effects in BiFeO3/Nb–SrTiO3 heterojunctions | |
Kong et al. | Metal-semiconductor-metal TiO2 ultraviolet detectors with Ni electrodes | |
Liu et al. | Resistive switching memory effect of ZrO2 films with Zr+ implanted | |
Qin et al. | Thickness effects on photoinduced current in ferroelectric (Pb0. 97La0. 03)(Zr0. 52Ti0. 48) O3 thin films | |
Sharma et al. | Capacitance-voltage characteristics of organic Schottky diode with and without deep traps | |
Chen et al. | Tunable photovoltaic effects in transparent Pb (Zr0. 53, Ti0. 47) O3 capacitors | |
Xing et al. | High-sensitive switchable photodetector based on BiFeO3 film with in-plane polarization | |
Guo et al. | Photovoltaic property of BiFeO3 thin films with 109 domains | |
Swain et al. | Polarization controlled photovoltaic and self-powered photodetector characteristics in Pb-free ferroelectric thin film | |
Ichiki et al. | Photovoltaic properties of (Pb, La)(Zr, Ti) O3 films with different crystallographic orientations | |
Harshan et al. | Influence of work-function of top electrodes on the photovoltaic characteristics of Pb0. 95La0. 05Zr0. 54Ti0. 46O3 thin film capacitors | |
Kooriyattil et al. | Photovoltaic properties of Aurivillius phase Bi5FeTi3O15 thin films grown by pulsed laser deposition | |
Qin et al. | Stability of photovoltage and trap of light-induced charges in ferroelectric WO3-doped (Pb0. 97La0. 03)(Zr0. 52Ti0. 48) O3 thin films | |
Pintilie et al. | Interface controlled photovoltaic effect in epitaxial Pb (Zr, Ti) O3 films with tetragonal structure | |
Won et al. | Diode and photocurrent effect in ferroelectric BaTiO3− δ | |
Zhou et al. | Electrode effect on high-detectivity ultraviolet photodetectors based on perovskite oxides | |
Tokunaga et al. | Colossal electroresistance effect at metal electrode/La1− xSr1+ xMnO4 interfaces | |
Jin et al. | Oxygen vacancy and photoelectron enhanced flexoelectricity in perovskite SrTiO3 crystal | |
Eskandari et al. | Polarization-dependent photovoltaic effect in ferroelectric-semiconductor system |