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Das et al., 2021 - Google Patents

RF/Analog performance of GaAs Multi-Fin FinFET with stress effect

Das et al., 2021

Document ID
8058510806623660613
Author
Das R
Maity S
Chowdhury A
Chakraborty A
Publication year
Publication venue
Microelectronics Journal

External Links

Snippet

Abstract Multiple Fins structured FinFET (M-FinFET) is a promising semiconductor device for future advancement of CMOS technology. In this paper, a new GaAs based M-FinFET structure is introduced that exhibits superior performance compared to other exiting FinFET …
Continue reading at www.sciencedirect.com (other versions)

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