[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

Özel et al., 2013 - Google Patents

Pulsed Laser Assisted Exfoliation of Hydrogen Ion Implanted Single Crystalline SiC Thin Layers

Özel et al., 2013

View PDF
Document ID
8049621702004830184
Author
Özel T
Thepsonthi T
Amarasinghe V
Celler G
Publication year
Publication venue
Proceedings of NAMRI/SME

External Links

Snippet

This paper reports about the investigation on pulsed laser assisted exfoliation of thin layers from hydrogen ion implanted single crystalline SiC. Single crystalline SiC offers various high power and high temperature device applications including hybrid and electric vehicles. Its …
Continue reading at www.researchgate.net (PDF) (other versions)

Classifications

    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond

Similar Documents

Publication Publication Date Title
Woo et al. Hydrogen ion implantation mechanism in GaAs‐on‐insulator wafer formation by ion‐cut process
US7759607B2 (en) Method of direct Coulomb explosion in laser ablation of semiconductor structures
Marks et al. Femtosecond laser dicing of ultrathin Si wafers with Cu backside layer-A fracture strength and microstructural study
Yan et al. Laser recovery of machining damage under curved silicon surface
Zhang et al. Defects in hydrogen implanted SiC
Braley et al. Si exfoliation by MeV proton implantation
Özel et al. Pulsed Laser Assisted Exfoliation of Hydrogen Ion Implanted Single Crystalline SiC Thin Layers
Li et al. Implantation temperature and thermal annealing behavior in H2+-implanted 6H-SiC
Chen et al. Pattern-induced ripple structures at silicon-oxide/silicon interface by excimer laser irradiation
Gnatyuk et al. Characterization of functional layers of CdTe crystals subjected to different surface treatments
Özel et al. Nanosecond Pulsed Laser Processing of Ion Implanted Single Crystal Silicon Carbide Thin Layers
Hedler et al. Excimer laser crystallization of amorphous silicon carbide produced by ion implantation
Grun et al. Athermal annealing of silicon
Wu et al. Pulsed Laser Annealing of Phosphorous-Implanted 4H-SiC: Electrical and Structural Characteristics
Amarasinghe et al. Optimization of H+ implantation parameters for exfoliation of 4H-SiC films
US20110130013A1 (en) Substrate processing method and semiconductor device manufacturing method
Poperenko et al. Laser-induced modification of the surface state and optical properties of CdTe crystals
Drouin et al. Application of advanced characterization techniques to SmartSiC™ product for substrate-level device performance optimization
Baidullaeva et al. The evolution of surface structures in p-CdTe crystals under pulsed laser irradiation
郭东明 et al. State-of-the-art and Prospectives of Ultra-precision Grinding Technology for Semiconductor Substrates
Sukach et al. Ultrasonic treatment-induced modification of the electrical properties of InAs pn junctions
Ohmura et al. Modified-layer formation mechanism into silicon with permeable nanosecond laser
He et al. Dimensional changes of Al2O3, MgO, MgAl2O4, AlN and Si3N4 by helium implantation
Li et al. Recent Development of Low Damage Laser Microprocessing on Surface and Subsurface Treatment of Silicon for Industrial Applications
Declémy et al. Microstructural study of Fe-implanted SiC: Comparison of different post-implantation treatments