[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

Dasari et al., 2011 - Google Patents

Metrology characterization of spacer double patterning by scatterometry

Dasari et al., 2011

Document ID
7942902005509709169
Author
Dasari P
Li J
Hu J
Liu Z
Kritsun O
Volkman C
Publication year
Publication venue
Metrology, Inspection, and Process Control for Microlithography XXV

External Links

Snippet

Spacer defined double patterning processes consists of multiple deposition, post strips and etch steps and is inherently susceptible to the cumulative effects of defects from each process step leading to higher rate of defect detection. CD distortions and CD non-uniformity …
Continue reading at www.spiedigitallibrary.org (other versions)

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Exposure apparatus for microlithography
    • G03F7/70483—Information management, control, testing, and wafer monitoring, e.g. pattern monitoring
    • G03F7/70616—Wafer pattern monitoring, i.e. measuring printed patterns or the aerial image at the wafer plane
    • G03F7/70625—Pattern dimensions, e.g. line width, profile, sidewall angle, edge roughness
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical means
    • G01B11/02—Measuring arrangements characterised by the use of optical means for measuring length, width or thickness
    • G01B11/06—Measuring arrangements characterised by the use of optical means for measuring length, width or thickness for measuring thickness, e.g. of sheet material
    • G01B11/0616—Measuring arrangements characterised by the use of optical means for measuring length, width or thickness for measuring thickness, e.g. of sheet material of coating
    • G01B11/0625—Measuring arrangements characterised by the use of optical means for measuring length, width or thickness for measuring thickness, e.g. of sheet material of coating with measurement of absorption or reflection
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Exposure apparatus for microlithography
    • G03F7/70483—Information management, control, testing, and wafer monitoring, e.g. pattern monitoring
    • G03F7/70616—Wafer pattern monitoring, i.e. measuring printed patterns or the aerial image at the wafer plane
    • G03F7/70633—Overlay
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Exposure apparatus for microlithography
    • G03F7/70483—Information management, control, testing, and wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management and control, including software
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using infra-red, visible or ultra-violet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/8422—Investigating thin films, e.g. matrix isolation method
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical means
    • G01B11/24—Measuring arrangements characterised by the use of optical means for measuring contours or curvatures
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using infra-red, visible or ultra-violet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated

Similar Documents

Publication Publication Date Title
US10151986B2 (en) Signal response metrology based on measurements of proxy structures
CN108886006B (en) Semiconductor metrology utilizing information from multiple processing steps
JP4196319B2 (en) Overlay measurement method
US10352876B2 (en) Signal response metrology for scatterometry based overlay measurements
US20160322267A1 (en) Multi-model metrology
US8930156B2 (en) Metrology through use of feed forward feed sideways and measurement cell re-use
WO2016172122A1 (en) Metrology target design for tilted device designs
US7580129B2 (en) Method and system for improving accuracy of critical dimension metrology
US7553678B2 (en) Method for detecting semiconductor manufacturing conditions
Dasari et al. Metrology characterization of spacer double patterning by scatterometry
Allgair et al. Manufacturing considerations for implementation of scatterometry for process monitoring
Dasari et al. Scatterometry metrology challenges of EUV
Sendelbach et al. Use of multiple azimuthal angles to enable advanced scatterometry applications
Dasari et al. Diffraction-based overlay metrology for double patterning technologies
Quintanilha et al. Application of spectroscopic scatterometry method in hole matrices analysis
Li et al. Simultaneous overlay and CD measurement for double patterning: scatterometry and RCWA approach
Raymond et al. Applications of angular scatterometry for the measurement of multiply periodic features
KR100672691B1 (en) Pattern measuring method of semiconductor device
Wang et al. 3D NAND Oxide/Nitride Tier Stack Thickness and Zonal Measurements With Infrared Metrology
Dasari et al. Scatterometry evaluation of focus-dose effects of EUV structures
Pundaleva et al. Detailed analysis of capability and limitations of CD scatterometry measurements for 65-and 45-nm nodes
Wack et al. Opportunities and challenges for optical CD metrology in double patterning process control
Cho et al. CD and profile metrology of EUV masks using scatterometry based optical digital profilometry
Chen et al. Application of scatterometry for CD and profile metrology in 193-nm lithography process development
Jekauc et al. Metal etcher qualification using angular scatterometry