Le Dantec et al., 1999 - Google Patents
Tunable microcavity based on InP-air Bragg mirrorsLe Dantec et al., 1999
View PDF- Document ID
- 7843724719101845233
- Author
- Le Dantec R
- Benyattou T
- Guillot G
- Spisser A
- Seassal C
- Leclercq J
- Viktorovitch P
- Rondi D
- Blondeau R
- Publication year
- Publication venue
- IEEE journal of selected topics in quantum electronics
External Links
Snippet
A tunable Fabry-Perot filter based on InP-air Bragg mirrors has been studied. The filter experimental performances are a resonance line width of 0.6 nm and a tuning range of 62 nm for 14 V. The full-width at half-maximum is kept below 1 nm over a 40-nm tuning range …
- 238000005452 bending 0 abstract description 15
Classifications
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- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01S—DEVICES USING STIMULATED EMISSION
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01S—DEVICES USING STIMULATED EMISSION
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting lasers (SE-lasers)
- H01S5/183—Surface-emitting lasers (SE-lasers) having a vertical cavity (VCSE-lasers)
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01S—DEVICES USING STIMULATED EMISSION
- H01S3/00—Lasers, i.e. devices for generation, amplification, modulation, demodulation, or frequency-changing, using stimulated emission, of infra-red, visible, or ultra-violet waves
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01S—DEVICES USING STIMULATED EMISSION
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
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- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01S—DEVICES USING STIMULATED EMISSION
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/0607—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature
- H01S5/0614—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature controlled by electric field, i.e. whereby an additional electric field is used to tune the bandgap, e.g. using the Stark-effect
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
- G02B6/00—Light guides
- G02B6/10—Light guides of the optical waveguide type
- G02B6/12—Light guides of the optical waveguide type of the integrated circuit kind
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