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Lee et al., 2016 - Google Patents

Multilayer MoS 2 thin-film transistors employing silicon nitride and silicon oxide dielectric layers

Lee et al., 2016

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Document ID
778287761319995923
Author
Lee C
Vardy N
Wong W
Publication year
Publication venue
IEEE Electron Device Letters

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Snippet

Bottom-gate molybdenum disulfide (MoS 2) TFTs, having plasma-enhanced chemical vapor deposition (PECVD) gate-dielectric thin films, were fabricated from 80-100 nm thick mechanically exfoliated MoS 2 multilayers. Three separate gate dielectric structures were …
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