[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

Li et al., 2008 - Google Patents

Gain recovery in semiconductor optical amplifiers

Li et al., 2008

Document ID
7775636719812676254
Author
Li X
Adams M
Alexandropoulos D
Lealman I
Publication year
Publication venue
Optics communications

External Links

Snippet

Pump–probe measurements are presented of gain compression and recovery in a series of four semiconductor optical amplifiers of different lengths but otherwise identical structures. A continuous wave probe beam from a tunable laser is used to measure the wavelength …
Continue reading at www.sciencedirect.com (other versions)

Classifications

    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01S—DEVICES USING STIMULATED EMISSION
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
    • H01S5/06255—Controlling the frequency of the radiation
    • H01S5/06256—Controlling the frequency of the radiation with DBR-structure
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01S—DEVICES USING STIMULATED EMISSION
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feed-back lasers (DFB-lasers)
    • H01S5/125—Distributed Bragg reflector lasers (DBR-lasers)
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01S—DEVICES USING STIMULATED EMISSION
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well, or supperlattice structures, e.g. single quantum well lasers (SQW lasers), multiple quantum well lasers (MQW lasers), graded index separate confinement hetrostructure lasers (GRINSCH lasers)
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01S—DEVICES USING STIMULATED EMISSION
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/0607—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01S—DEVICES USING STIMULATED EMISSION
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01S—DEVICES USING STIMULATED EMISSION
    • H01S3/00—Lasers, i.e. devices for generation, amplification, modulation, demodulation, or frequency-changing, using stimulated emission, of infra-red, visible, or ultra-violet waves
    • H01S3/05—Construction or shape of optical resonators; Accomodation of active medium therein; Shape of active medium
    • H01S3/06—Construction or shape of active medium
    • H01S3/063—Waveguide lasers, i.e. whereby the dimensions of the waveguide are of the order of the light wavelength
    • H01S3/067—Fibre lasers
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01S—DEVICES USING STIMULATED EMISSION
    • H01S3/00—Lasers, i.e. devices for generation, amplification, modulation, demodulation, or frequency-changing, using stimulated emission, of infra-red, visible, or ultra-violet waves
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01S—DEVICES USING STIMULATED EMISSION
    • H01S5/00—Semiconductor lasers
    • H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30
    • G—PHYSICS
    • G02—OPTICS
    • G02F—DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
    • G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction

Similar Documents

Publication Publication Date Title
Connelly Semiconductor optical amplifiers
Knigge et al. Wavelength‐stabilized high‐pulse‐power laser diodes for automotive LiDAR
Crowley et al. GaAs-based quantum dot lasers
Stolarz et al. Spectral dynamical behavior in passively mode-locked semiconductor lasers
Pleumeekers et al. Longitudinal spatial hole burning and associated nonlinear gain in gain-clamped semiconductor optical amplifiers
Nomura et al. Mode locking in Fabry-Perot semiconductor lasers
Talli et al. Gain recovery acceleration in semiconductor optical amplifiers employing a holding beam
Bischoff et al. Monolithic colliding pulse mode-locked semiconductor lasers
Uenohara et al. Static and dynamic response of multiple-quantum-well voltage-controlled bistable laser diodes
Ryvkin et al. Strong doping of the n-optical confinement layer for increasing output power of high-power pulsed laser diodes in the eye safe wavelength range
Kuwatsuka et al. Enhancement of third-order nonlinear optical susceptibilities in compressively strained quantum wells under the population inversion condition
Li et al. Gain recovery in semiconductor optical amplifiers
Tolstikhin et al. Carrier heating effects in dynamic-single-frequency GaInAsP-InP laser diodes
Sun et al. Femtosecond gain dynamics in InGaAs/AlGaAs strained‐layer single‐quantum‐well diode lasers
Massoubre et al. Analysis of thermal limitations in high-speed microcavity saturable absorber all-optical switching gates
Tilma et al. Measurement and analysis of optical gain spectra in 1.6 to 1.8 μm InAs/InP (100) quantum-dot amplifiers
Lai et al. Carrier diffusion effect in tapered semiconductor-laser amplifier
Girardin et al. Characterization of semiconductor lasers by spontaneous emission measurements
Meehan et al. Experimental characterization and modeling of the improved low frequency response of a current modulated bulk RSOA slow light based microwave phase shifter
Keshavarz et al. Gain and phase recovery dynamics in quantum-dot vertical-cavity semiconductor optical amplifiers
Champagne et al. Linewidth broadening in a distributed feedback laser integrated with a semiconductor optical amplifier
Dogru et al. Numerical simulation of a mode‐locked quantum dot external cavity laser
Hülsewede et al. Beam quality of high power 800 nm broad-area laser diodes with 1 and 2 μm large optical cavity structures
Qin et al. Numerical simulation of ring cavity wavelength-swept laser based on semiconductor optical amplifier
Li et al. Wavelength dependence of gain recovery time in semiconductor optical amplifiers