Chun et al., 2008 - Google Patents
Controlled assembly and dispersion of strain-induced InGaAs/GaAs nanotubesChun et al., 2008
View PDF- Document ID
- 7758736763608212495
- Author
- Chun I
- Li X
- Publication year
- Publication venue
- IEEE Transactions on Nanotechnology
External Links
Snippet
Group III-V semiconductor nanotubes (SNTs) are formed when strained planar bilayers are released from the substrate. Compared to other nanotechnology building blocks, one of the main advantages of SNTs is the capability of precise positioning due to the top-down …
- 229910001218 Gallium arsenide 0 title abstract description 20
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANO-TECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANO-STRUCTURES; MEASUREMENT OR ANALYSIS OF NANO-STRUCTURES; MANUFACTURE OR TREATMENT OF NANO-STRUCTURES
- B82Y40/00—Manufacture or treatment of nano-structures
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANO-TECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANO-STRUCTURES; MEASUREMENT OR ANALYSIS OF NANO-STRUCTURES; MANUFACTURE OR TREATMENT OF NANO-STRUCTURES
- B82Y30/00—Nano-technology for materials or surface science, e.g. nano-composites
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANO-TECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANO-STRUCTURES; MEASUREMENT OR ANALYSIS OF NANO-STRUCTURES; MANUFACTURE OR TREATMENT OF NANO-STRUCTURES
- B82Y10/00—Nano-technology for information processing, storage or transmission, e.g. quantum computing or single electron logic
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Chun et al. | Controlled assembly and dispersion of strain-induced InGaAs/GaAs nanotubes | |
| US9230801B2 (en) | Graphene structure and method of fabricating the same | |
| KR102087337B1 (en) | A method of making a stretchable and flexible device | |
| Deneke et al. | Diameter scalability of rolled-up In (Ga) As/GaAs nanotubes | |
| Chik et al. | Nanometric superlattices: non-lithographic fabrication, materials, and prospects | |
| Fan et al. | Semiconductor nanowires: from self‐organization to patterned growth | |
| Liu et al. | Needlelike bicrystalline GaN nanowires with excellent field emission properties | |
| US20070102111A1 (en) | Controlled nanotube fabrication and uses | |
| Haas et al. | Nanoimprint and selective-area MOVPE for growth of GaAs/InAs core/shell nanowires | |
| US20040035355A1 (en) | Catalyst-free growth of single-wall carbon nanotubes | |
| CN102358614A (en) | A kind of processing method of graphene nano pattern | |
| US20130230703A1 (en) | Nanotube network and method of fabricating the same | |
| Chun et al. | InGaAs/GaAs 3D architecture formation by strain-induced self-rolling with lithographically defined rectangular stripe arrays | |
| Kim et al. | Heterogeneous deformation of two-dimensional materials for emerging functionalities | |
| Deneke et al. | Straining nanomembranes via highly mismatched heteroepitaxial growth: InAs islands on compliant Si substrates | |
| US8632873B2 (en) | Aligned nanoarray and method for fabricating the same | |
| Zhou et al. | Controlled growth of single-walled carbon nanotubes on patterned substrates | |
| US20040043148A1 (en) | Method for fabricating carbon nanotube device | |
| Oshima et al. | High-resolution ultrahigh-vacuum electron microscopy of helical gold nanowires: junction and thinning process | |
| KR101309308B1 (en) | Electronic device and manufacturing method thereof | |
| Schmidt et al. | Nanotechnology—bottom-up meets top-down | |
| Wang et al. | Effect of nanohole size on selective area growth of InAs nanowire arrays on Si substrates | |
| Wang et al. | Nanoimprint assisted transfer of different density vertically aligned ZnO nanorod arrays | |
| Chun et al. | Engineered large area fabrication of ordered InGaAs-GaAs nanotube arrays | |
| Grützmacher et al. | Templated self-organization of SiGe quantum structures for nanoelectronics |