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Olsen et al., 2002 - Google Patents

Strained Si/SiGe n-channel MOSFETs: impact of cross-hatching on device performance

Olsen et al., 2002

Document ID
7749114066471811209
Author
Olsen S
O'Neill A
Norris D
Cullis A
Woods N
Zhang J
Fobelets K
Kemhadjian H
Publication year
Publication venue
Semiconductor science and technology

External Links

Snippet

The performance of surface channel MOSFET devices depends on the Si/SiO 2 interface quality. The present study has examined the Si/SiO 2 interface of strained Si n-channel MOSFETs fabricated on a Si/SiGe virtual substrate. Evidence of a variation in the oxidation …
Continue reading at iopscience.iop.org (other versions)

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