Jan Vardaman, 2008 - Google Patents
3-D Through-Silicon Via TechnologyJan Vardaman, 2008
- Document ID
- 7731223035592791153
- Author
- Jan Vardaman E
- Publication year
- Publication venue
- EDFA Technical Articles
External Links
Snippet
This article provides a brief introduction to through-silicon via technology, a system-level architecture in which multiple layers of planar devices are stacked with interconnects running in the vertical as well as lateral direction. Some of the different fabrication processes …
- 238000005516 engineering process 0 title abstract description 27
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- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
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- H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L51/00, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L25/0657—Stacked arrangements of devices
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