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Pang et al., 2020 - Google Patents

Thermoelectric properties of layered ternary telluride Nb 3 SiTe 6

Pang et al., 2020

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Document ID
7710660410226967767
Author
Pang Y
Rezaei E
Chen D
Li S
Jian Y
Wang Q
Wang Z
Duan J
Zebarjadi M
Yao Y
Publication year
Publication venue
Physical Review Materials

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Snippet

We report the study of the thermoelectric properties of layered ternary telluride Nb 3 SiTe 6. The temperature dependence of the thermoelectric power (TEP) evolves from nonlinear to linear when the thickness of the devices is reduced, consistent with the suppression of …
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    • H01L29/02—Semiconductor bodies; Multistep manufacturing processes therefor
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    • H01L35/32—Thermo-electric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermo-electric effects or thermomagnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof operating with Peltier or Seebeck effect only characterised by the structure or configuration of the cell or thermo-couple forming the device including details about, e.g., housing, insulation, geometry, module
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