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Coquand et al., 2013 - Google Patents

Scaling of high-κ/metal-gate TriGate SOI nanowire transistors down to 10 nm width

Coquand et al., 2013

Document ID
7650591593271343573
Author
Coquand R
Barraud S
Cassé M
Leroux P
Vizioz C
Comboroure C
Perreau P
Ernst E
Samson M
Maffini-Alvaro V
Tabone C
Barnola S
Munteanu D
Ghibaudo G
Monfray S
Boeuf F
Poiroux T
Publication year
Publication venue
Solid-State Electronics

External Links

Snippet

In this paper, TriGate nanowire (TGNW) FETs with high-κ/metal gate are studied as an alternative way to planar devices for the future CMOS technological nodes (14 nm and beyond). The influence of Si film thickness (H) and nanowire width (W) on electrical …
Continue reading at www.sciencedirect.com (other versions)

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