Thomas et al., 2018 - Google Patents
An adaptable 6.4-32 gs/s track-and-hold amplifier with track-mode masking for high signal power applications in 55 nm sige-bicmosThomas et al., 2018
- Document ID
- 7609268178761809993
- Author
- Thomas P
- Buck M
- Grözing M
- Berroth M
- Rauscher J
- Epp M
- Schlumpp M
- Publication year
- Publication venue
- 2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)
External Links
Snippet
This paper presents a track-and-hold amplifier based on a switched emitter follower with demonstrated sampling rates from 6.4 GS/s to 32 GS/s and an analog bandwidth of up to 19 GHz in the hold-mode. Linearity measurements in the first Nyquist zone show 4.9-7.9 bits of …
- 230000000873 masking 0 title abstract description 6
Classifications
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03M—CODING; DECODING; CODE CONVERSION IN GENERAL
- H03M1/00—Analogue/digital conversion; Digital/analogue conversion
- H03M1/06—Continuously compensating for, or preventing, undesired influence of physical parameters
- H03M1/0617—Continuously compensating for, or preventing, undesired influence of physical parameters characterised by the use of methods or means not specific to a particular type of detrimental influence
- H03M1/0626—Continuously compensating for, or preventing, undesired influence of physical parameters characterised by the use of methods or means not specific to a particular type of detrimental influence by filtering
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/45—Differential amplifiers
- H03F3/45071—Differential amplifiers with semiconductor devices only
- H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
- H03F3/45179—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
- H03F3/45197—Pl types
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03M—CODING; DECODING; CODE CONVERSION IN GENERAL
- H03M1/00—Analogue/digital conversion; Digital/analogue conversion
- H03M1/12—Analogue/digital converters
- H03M1/14—Conversion in steps with each step involving the same or a different conversion means and delivering more than one bit
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
- H03D7/00—Transference of modulation from one carrier to another, e.g. frequency-changing
- H03D7/14—Balanced arrangements
- H03D7/1425—Balanced arrangements with transistors
- H03D7/1441—Balanced arrangements with transistors using field-effect transistors
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
- H03D7/00—Transference of modulation from one carrier to another, e.g. frequency-changing
- H03D7/14—Balanced arrangements
- H03D7/1425—Balanced arrangements with transistors
- H03D7/1433—Balanced arrangements with transistors using bipolar transistors
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
- H03D2200/00—Indexing scheme relating to details of demodulation or transference of modulation from one carrier to another covered by H03D
- H03D2200/0041—Functional aspects of demodulators
- H03D2200/0088—Reduction of intermodulation, nonlinearities, adjacent channel interference; intercept points of harmonics or intermodulation products
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
- H03D2200/00—Indexing scheme relating to details of demodulation or transference of modulation from one carrier to another covered by H03D
- H03D2200/0041—Functional aspects of demodulators
- H03D2200/0049—Analog multiplication for detection
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H11/00—Networks using active elements
Similar Documents
Publication | Publication Date | Title |
---|---|---|
VorenKamp et al. | A 12-b, 60-MSample/s cascaded folding and interpolating ADC | |
Thomas et al. | An adaptable 6.4-32 gs/s track-and-hold amplifier with track-mode masking for high signal power applications in 55 nm sige-bicmos | |
Fiocchi et al. | Design issues on high-speed high-resolution track-and-holds in BiCMOS technology | |
Li et al. | A 5-bit, 18 GS/sec SiGe HBT track-and-hold amplifier | |
Jakonis et al. | A 1 GHz linearized CMOS track-and-hold circuit | |
Borokhovych et al. | A low-power, 10GS/s track-and-hold amplifier in SiGe BiCMOS technology | |
Yamanaka et al. | A 20-Gs/s track-and-hold amplifier in InP HBT technology | |
Thomas et al. | 32-GS/s SiGe Track-and-Hold Amplifier with 58-GHz Bandwidth and− 64-dBc to− 29-dBc HD3 | |
Wu et al. | A 70 GHz small-signal bandwidth 40 GS/s track-and-hold amplifier in 130 nm SiGe BiCMOS technology | |
Razavi | A 200-MHz 15-mW BiCMOS sample-and-hold amplifier with 3 V supply | |
Reyhani et al. | A 5 V, 6-b, 80 Ms/s BiCMOS flash ADC | |
Deza et al. | A 50-GHz-small-signal-bandwidth 50 GSa/s track&hold amplifier in InP DHBT technology | |
Zhen et al. | A 35-GHz bandwidth 30 GSa/s InP track-and-hold amplifier using enhanced f T-doubler technique | |
Thomas et al. | Time-Interleaved Switched Emitter Followers to Extend Front-End Sampling Rates to up to 200 GS/s | |
Wu et al. | Above 60 GHz bandwidth 10 GS/s sampling rate track-and-hold amplifier in 130 nm SiGe BiCMOS technology | |
US8319551B2 (en) | Method and system for improving limiting amplifier phase noise for low slew-rate input signals | |
Buck et al. | A 6 Ghz input bandwidth 2 V pp-diff input range 6.4 GS/s track-and-hold circuit in 0.25 μm BiCMOS | |
Lal et al. | A compact, high linearity 40GS/s track-and-hold amplifier in 90nm SiGe technology | |
Buck et al. | A 6-GS/s 9.5-b Single-Core Pipelined Folding-Interpolating ADC With 7.3 ENOB and 52.7-dBc SFDR in the Second Nyquist Band in 0.25-$\mu $ m SiGe-BiCMOS | |
US6031398A (en) | Reduced-feedthrough switch circuit | |
Li et al. | A 7-bit, 18 GHz SiGe HBT comparator for medium resolution A/D conversion | |
Tantawy et al. | A high linearity, 2.8 GS/s, 10-bit accurate, sample and hold amplifier in 130 nm SiGe BiCMOS | |
Wu et al. | Analysis and design of a charge sampler with 70-GHz 1-dB bandwidth in 130-nm SiGe BiCMOS | |
Wu et al. | 70 GHz large-signal bandwidth sampler using current-mode integrate-and-hold circuit in 130 nm SiGe BiCMOS technology | |
Meyer et al. | Single-ended/differential 2.5-GS/s double switching Track-and-hold amplifier with 26GHz bandwidth in SiGe BiCMOS technology |