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Spitznagel et al., 1986 - Google Patents

Ion irradiation effects on high strength, high conductivity copper alloys

Spitznagel et al., 1986

Document ID
7561073121476968542
Author
Spitznagel J
Doyle N
Choyke W
Greggi Jr J
McGruer J
Davis J
Publication year
Publication venue
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

External Links

Snippet

Microstructural effects in a solid solution cold work strengthened copper alloy (Cu− 0.15 wt.% Zr), a precipitation strengthened alloy (beryllium copper) and a dispersion hardened alloy (Cu− 0.6 wt.% Al as Al 2 O 3 particles) after high energy ion irradiation at fluences from …
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Classifications

    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L39/00—Devices using superconductivity; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof
    • H01L39/24—Processes or apparatus peculiar to the manufacture or treatment of devices provided for in H01L39/00 or of parts thereof
    • H01L39/2419—Processes or apparatus peculiar to the manufacture or treatment of devices provided for in H01L39/00 or of parts thereof the superconducting material comprising copper oxide
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26

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